Self-compliance RRAM characteristics using a novel W/TaO x /TiN structure - Wikidata - awgldk - TriplyDB

Self-compliance RRAM characteristics using a novel W/TaO x /TiN structure

Self-compliance RRAM characteristics using a novel W/TaO x /TiN structure

http://www.wikidata.org/entity/Q33789232

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Retention Model of TaO/HfO x and TaO/AlO x RRAM with Self-Rectifying Switch Characteristics.Negative voltage modulated multi-level resistive switching by using a Cr/BaTiOx/TiN structure and quantum conductance through evidence of H2O2 sensing mechanism.Power- and Low-Resistance-State-Dependent, Bipolar Reset-Switching Transitions in SiN-Based Resistive Random-Access Memory Analysis of the Negative-SET Behaviors in Cu/ZrO2/Pt Devices.High-performance HfO x /AlO y -based resistive switching memory cross-point array fabricated by atomic layer deposition.Four-Bits-Per-Cell Operation in an HfO2 -Based Resistive Switching Device.Bipolar resistive switching with negative differential resistance effect in a Cu/BaTiO3/Ag device.Voltage-polarity dependent multi-mode resistive switching on sputtered MgO nanostructures.

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P2860

Self-compliance RRAM characteristics using a novel W/TaO x /TiN structure

http://www.wikidata.org/entity/Q33789232

description

2014 nî lūn-bûn

@nan

2014 թուականի Յունիսին հրատարակուած գիտական յօդուած

@hyw

2014 թվականի հունիսին հրատարակված գիտական հոդված

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2014年の論文

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2014年学术文章

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2014年学术文章

@zh-cn

2014年学术文章

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2014年学术文章

@zh-my

2014年学术文章

@zh-sg

2014年學術文章

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name

Self-compliance RRAM characteristics using a novel W/TaO x /TiN structure

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Self-compliance RRAM characteristics using a novel W/TaO x /TiN structure

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Self-compliance RRAM characteristics using a novel W/TaO x /TiN structure

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Self-compliance RRAM characteristics using a novel W/TaO x /TiN structure

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Self-compliance RRAM characteristics using a novel W/TaO x /TiN structure

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Self-compliance RRAM characteristics using a novel W/TaO x /TiN structure

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1556-276X-9-292

P1433

Nanoscale Research Letters

P1476

Self-compliance RRAM characteristics using a novel W/TaO x /TiN structure

@en

P2093

Amit Prakash

http://www.w3.org/2001/XMLSchema#string

Debanjan Jana

http://www.w3.org/2001/XMLSchema#string

Mrinmoy Dutta

http://www.w3.org/2001/XMLSchema#string

Siddheswar Maikap

http://www.w3.org/2001/XMLSchema#string

P2860

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

TaOx-based resistive switching memories: prospective and challenges.

Excellent resistive memory characteristics and switching mechanism using a Ti nanolayer at the Cu/TaOx interface.

Impact of electrically formed interfacial layer and improved memory characteristics of IrOx/high-κx/W structures containing AlOx, GdOx, HfOx, and TaOx switching materials.

Enhanced resistive switching phenomena using low-positive-voltage format and self-compliance IrOx/GdOx/W cross-point memories.

P2888

1556-276x-9-292

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292

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scholarly article

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10.1186/1556-276X-9-292

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1

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9

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2014-06-10T00:00:00Z

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1022820465

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24982604

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4066319

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