Excellent resistive memory characteristics and switching mechanism using a Ti nanolayer at the Cu/TaOx interface.
about
Switching operation and degradation of resistive random access memory composed of tungsten oxide and copper investigated using in-situ TEM.Enhanced stability of filament-type resistive switching by interface engineeringSelf-compliance RRAM characteristics using a novel W/TaO x /TiN structureTaOx-based resistive switching memories: prospective and challenges.Copper pillar and memory characteristics using Al2O3 switching material for 3D architecture.Enhanced nanoscale resistive switching memory characteristics and switching mechanism using high-Ge-content Ge0.5Se0.5 solid electrolyte.Comparison of resistive switching characteristics using copper and aluminum electrodes on GeOx/W cross-point memories.Investigation of LRS dependence on the retention of HRS in CBRAM.Conductive-bridging random access memory: challenges and opportunity for 3D architecture.Resistive and New Optical Switching Memory Characteristics Using Thermally Grown Ge0.2Se0.8 Film in Cu/GeSex/W Structure.Resistive switching memory characteristics of Ge/GeOx nanowires and evidence of oxygen ion migration.Impact of electrically formed interfacial layer and improved memory characteristics of IrOx/high-κx/W structures containing AlOx, GdOx, HfOx, and TaOx switching materials.Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface.Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaO x interface.
P2860
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P2860
Excellent resistive memory characteristics and switching mechanism using a Ti nanolayer at the Cu/TaOx interface.
description
2012 nî lūn-bûn
@nan
2012年の論文
@ja
2012年論文
@yue
2012年論文
@zh-hant
2012年論文
@zh-hk
2012年論文
@zh-mo
2012年論文
@zh-tw
2012年论文
@wuu
2012年论文
@zh
2012年论文
@zh-cn
name
Excellent resistive memory cha ...... ayer at the Cu/TaOx interface.
@ast
Excellent resistive memory cha ...... ayer at the Cu/TaOx interface.
@en
type
label
Excellent resistive memory cha ...... ayer at the Cu/TaOx interface.
@ast
Excellent resistive memory cha ...... ayer at the Cu/TaOx interface.
@en
prefLabel
Excellent resistive memory cha ...... ayer at the Cu/TaOx interface.
@ast
Excellent resistive memory cha ...... ayer at the Cu/TaOx interface.
@en
P2093
P2860
P356
P1476
Excellent resistive memory cha ...... layer at the Cu/TaOx interface
@en
P2093
Frederick T Chen
Heng-Yuan Lee
Ming-Jer Kao
Ming-Jinn Tsai
Ta-Chang Tien
Wei-Su Chen
P2860
P2888
P356
10.1186/1556-276X-7-345
P577
2012-06-26T00:00:00Z
P5875
P6179
1004616763