Influence of embedding Cu nano-particles into a Cu/SiO2/Pt structure on its resistive switching.
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Simplified ZrTiO x -based RRAM cell structure with rectifying characteristics by integrating Ni/n + -Si diode.Total ionizing dose (TID) effects of γ ray radiation on switching behaviors of Ag/AlO x /Pt RRAM deviceAdvanced Cu chemical displacement technique for SiO2-based electrochemical metallization ReRAM application.Bias-polarity-dependent resistance switching in W/SiO2/Pt and W/SiO2/Si/Pt structures.Impact of electrically formed interfacial layer and improved memory characteristics of IrOx/high-κx/W structures containing AlOx, GdOx, HfOx, and TaOx switching materials.Enhanced resistive switching phenomena using low-positive-voltage format and self-compliance IrOx/GdOx/W cross-point memories.Transparent multi-level resistive switching phenomena observed in ITO/RGO/ITO memory cells by the sol-gel dip-coating methodResistive switching behavior of reduced graphene oxide memory cells for low power nonvolatile device applicationCellulose nanofiber paper as an ultra flexible nonvolatile memoryDirect Observation of Dual-Filament Switching Behaviors in Ta2 O5 -Based Memristors.
P2860
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P2860
Influence of embedding Cu nano-particles into a Cu/SiO2/Pt structure on its resistive switching.
description
2013 nî lūn-bûn
@nan
2013年の論文
@ja
2013年論文
@yue
2013年論文
@zh-hant
2013年論文
@zh-hk
2013年論文
@zh-mo
2013年論文
@zh-tw
2013年论文
@wuu
2013年论文
@zh
2013年论文
@zh-cn
name
Influence of embedding Cu nano ...... re on its resistive switching.
@en
type
label
Influence of embedding Cu nano ...... re on its resistive switching.
@en
prefLabel
Influence of embedding Cu nano ...... re on its resistive switching.
@en
P2093
P356
P1476
Influence of embedding Cu nano ...... re on its resistive switching.
@en
P2093
Chao-Han Lin
Chih-Yi Liu
Chun-Hung Lai
Jyun-Jie Huang
P2888
P356
10.1186/1556-276X-8-156
P577
2013-04-08T00:00:00Z
P6179
1023389306