Multiple-stable anisotropic magnetoresistance memory in antiferromagnetic MnTe.
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Antiferromagnetic CuMnAs multi-level memory cell with microelectronic compatibility.Antiferromagnetic THz-frequency Josephson-like Oscillator Driven by Spin Current.Spin-Polarized Current in Noncollinear Antiferromagnets.Imaging Current-Induced Switching of Antiferromagnetic Domains in CuMnAs.Negative-pressure polymorphs made by heterostructural alloying.Terahertz electrical writing speed in an antiferromagnetic memory.Electrically induced and detected Néel vector reversal in a collinear antiferromagnetSpin torque control of antiferromagnetic moments in NiO
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Multiple-stable anisotropic magnetoresistance memory in antiferromagnetic MnTe.
description
article científic
@ca
article scientifique
@fr
articolo scientifico
@it
artigo científico
@pt
bilimsel makale
@tr
scientific article published on 09 June 2016
@en
vedecký článok
@sk
vetenskaplig artikel
@sv
videnskabelig artikel
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vědecký článek
@cs
name
Multiple-stable anisotropic magnetoresistance memory in antiferromagnetic MnTe.
@en
Multiple-stable anisotropic magnetoresistance memory in antiferromagnetic MnTe.
@nl
type
label
Multiple-stable anisotropic magnetoresistance memory in antiferromagnetic MnTe.
@en
Multiple-stable anisotropic magnetoresistance memory in antiferromagnetic MnTe.
@nl
prefLabel
Multiple-stable anisotropic magnetoresistance memory in antiferromagnetic MnTe.
@en
Multiple-stable anisotropic magnetoresistance memory in antiferromagnetic MnTe.
@nl
P2093
P2860
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P1476
Multiple-stable anisotropic magnetoresistance memory in antiferromagnetic MnTe
@en
P2093
H Reichlová
T Jungwirth
V V Volobuev
P2860
P2888
P356
10.1038/NCOMMS11623
P407
P577
2016-06-09T00:00:00Z
P698
P818
1508.04877