Imaging Current-Induced Switching of Antiferromagnetic Domains in CuMnAs.
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Antiferromagnetic CuMnAs multi-level memory cell with microelectronic compatibility.Control of antiferromagnetic spin axis orientation in bilayer Fe/CuMnAs films.Writing and reading antiferromagnetic Mn2Au by Néel spin-orbit torques and large anisotropic magnetoresistance.Terahertz electrical writing speed in an antiferromagnetic memory.Electrically induced and detected Néel vector reversal in a collinear antiferromagnetSpin torque control of antiferromagnetic moments in NiO
P2860
Imaging Current-Induced Switching of Antiferromagnetic Domains in CuMnAs.
description
2017 nî lūn-bûn
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2017年学术文章
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2017年学术文章
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name
Imaging Current-Induced Switching of Antiferromagnetic Domains in CuMnAs.
@en
Imaging Current-Induced Switching of Antiferromagnetic Domains in CuMnAs.
@nl
type
label
Imaging Current-Induced Switching of Antiferromagnetic Domains in CuMnAs.
@en
Imaging Current-Induced Switching of Antiferromagnetic Domains in CuMnAs.
@nl
prefLabel
Imaging Current-Induced Switching of Antiferromagnetic Domains in CuMnAs.
@en
Imaging Current-Induced Switching of Antiferromagnetic Domains in CuMnAs.
@nl
P2093
P2860
P50
P1476
Imaging Current-Induced Switching of Antiferromagnetic Domains in CuMnAs.
@en
P2093
B L Gallagher
F Maccherozzi
J S Chauhan
K W Edmonds
M J Grzybowski
R Beardsley
R P Campion
P2860
P304
P356
10.1103/PHYSREVLETT.118.057701
P407
P577
2017-01-31T00:00:00Z
P698
P818
1607.08478