Anisotropic Magnetoresistance of Nano-conductive Filament in Co/HfO2/Pt Resistive Switching Memory. - Wikidata - awgldk - TriplyDB

Anisotropic Magnetoresistance of Nano-conductive Filament in Co/HfO2/Pt Resistive Switching Memory.

Anisotropic Magnetoresistance of Nano-conductive Filament in Co/HfO2/Pt Resistive Switching Memory.

http://www.wikidata.org/entity/Q37716695

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A 1D Vanadium Dioxide Nanochannel Constructed via Electric-Field-Induced Ion Transport and its Superior Metal-Insulator Transition.

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Anisotropic Magnetoresistance of Nano-conductive Filament in Co/HfO2/Pt Resistive Switching Memory.

http://www.wikidata.org/entity/Q37716695

description

article científic

@ca

article scientifique

@fr

articolo scientifico

@it

artigo científico

@pt

bilimsel makale

@tr

scientific article published on 22 March 2017

@en

vedecký článok

@sk

vetenskaplig artikel

@sv

videnskabelig artikel

@da

vědecký článek

@cs

name

Anisotropic Magnetoresistance ...... Pt Resistive Switching Memory.

@en

Anisotropic Magnetoresistance ...... Pt Resistive Switching Memory.

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type

label

Anisotropic Magnetoresistance ...... Pt Resistive Switching Memory.

@en

Anisotropic Magnetoresistance ...... Pt Resistive Switching Memory.

@nl

prefLabel

Anisotropic Magnetoresistance ...... Pt Resistive Switching Memory.

@en

Anisotropic Magnetoresistance ...... Pt Resistive Switching Memory.

@nl

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S11671-017-1983-2

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Nanoscale Research Letters

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Anisotropic Magnetoresistance ...... Pt Resistive Switching Memory.

@en

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Guanghua Yu

http://www.w3.org/2001/XMLSchema#string

Hangbing Lv

http://www.w3.org/2001/XMLSchema#string

Jiao Teng

http://www.w3.org/2001/XMLSchema#string

Leilei Li

http://www.w3.org/2001/XMLSchema#string

Meiyun Zhang

http://www.w3.org/2001/XMLSchema#string

Ming Liu

http://www.w3.org/2001/XMLSchema#string

Qi Liu

http://www.w3.org/2001/XMLSchema#string

Qixun Guo

http://www.w3.org/2001/XMLSchema#string

Shibing Long

http://www.w3.org/2001/XMLSchema#string

Yang Liu

http://www.w3.org/2001/XMLSchema#string

P2860

Atomically controlled electrochemical nucleation at superionic solid electrolyte surfaces.

Physical and chemical mechanisms in oxide-based resistance random access memory.

RRAM characteristics using a new Cr/GdOx/TiN structure.

Statistical characteristics of reset switching in Cu/HfO2/Pt resistive switching memory.

Spin memristive magnetic tunnel junctions with CoO-ZnO nano composite barrier.

Electrochemical metallization memories--fundamentals, applications, prospects.

Memristive devices for computing.

Voltage and power-controlled regimes in the progressive unipolar RESET transition of HfO₂-based RRAM.

Nanoscale memristive radiofrequency switches.

Bias voltage induced resistance switching effect in single-molecule magnets' tunneling junction.

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s11671-017-1983-2

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scholarly article

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10.1186/S11671-017-1983-2

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1

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2017-03-22T00:00:00Z

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1084249802

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28335585

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magnetoresistance

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5362562

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