Voltage and power-controlled regimes in the progressive unipolar RESET transition of HfO₂-based RRAM.
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Surface scattering mechanisms of tantalum nitride thin film resistorStudy of multi-level characteristics for 3D vertical resistive switching memoryRRAM characteristics using a new Cr/GdOx/TiN structure.Statistical characteristics of reset switching in Cu/HfO2/Pt resistive switching memory.Atomic View of Filament Growth in Electrochemical Memristive ElementsThermal crosstalk in 3-dimensional RRAM crossbar array.Conductance Quantization in Resistive Random Access Memory.Improvement of Bipolar Switching Properties of Gd:SiOx RRAM Devices on Indium Tin Oxide Electrode by Low-Temperature Supercritical CO2 Treatment.Mechanisms of Low-Temperature Nitridation Technology on a TaN Thin Film Resistor for Temperature Sensor Applications.Material insights of HfO2-based integrated 1-transistor-1-resistor resistive random access memory devices processed by batch atomic layer deposition.Analysis on the Filament Structure Evolution in Reset Transition of Cu/HfO2/Pt RRAM DeviceEffect of Oxygen-deficiencies on Resistance Switching in Amorphous YFe0.5Cr0.5O3-d filmsPower- and Low-Resistance-State-Dependent, Bipolar Reset-Switching Transitions in SiN-Based Resistive Random-Access MemorySpace electric field concentrated effect for Zr:SiO2 RRAM devices using porous SiO2 buffer layer.Enhanced resistive switching phenomena using low-positive-voltage format and self-compliance IrOx/GdOx/W cross-point memories.Hydrogen induced redox mechanism in amorphous carbon resistive random access memory.Anisotropic Magnetoresistance of Nano-conductive Filament in Co/HfO2/Pt Resistive Switching Memory.Crossbar Nanoscale HfO2-Based Electronic Synapses.Resistive Switching Performance Improvement via Modulating Nanoscale Conductive Filament, Involving the Application of Two-Dimensional Layered Materials.Investigation on the Conductive Filament Growth Dynamics in Resistive Switching Memory via a Universal Monte Carlo SimulatorA Review on Resistive Switching in High-k Dielectrics: A Nanoscale Point of View Using Conductive Atomic Force MicroscopeObservation of Resistive Switching Behavior in Crossbar Core-Shell Ni/NiO Nanowires Memristor.Ultrasensitive Memristive Synapses Based on Lightly Oxidized Sulfide Films.Dual Functions of V/SiO/AlO/pSi Device as Selector and MemoryStructural changes and conductance thresholds in metal-free intrinsic SiOx resistive random access memory
P2860
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P2860
Voltage and power-controlled regimes in the progressive unipolar RESET transition of HfO₂-based RRAM.
description
2013 nî lūn-bûn
@nan
2013年の論文
@ja
2013年論文
@yue
2013年論文
@zh-hant
2013年論文
@zh-hk
2013年論文
@zh-mo
2013年論文
@zh-tw
2013年论文
@wuu
2013年论文
@zh
2013年论文
@zh-cn
name
Voltage and power-controlled r ...... transition of HfO₂-based RRAM.
@en
type
label
Voltage and power-controlled r ...... transition of HfO₂-based RRAM.
@en
prefLabel
Voltage and power-controlled r ...... transition of HfO₂-based RRAM.
@en
P2093
P2860
P50
P356
P1433
P1476
Voltage and power-controlled r ...... transition of HfO₂-based RRAM
@en
P2093
Carlo Cagli
Julien Buckley
Luca Perniola
Shibing Long
Xiaojuan Lian
P2860
P2888
P356
10.1038/SREP02929
P407
P577
2013-10-14T00:00:00Z