Attaining resistive switching characteristics and selector properties by varying forming polarities in a single HfO2-based RRAM device with a vanadium electrode.
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Attaining resistive switching characteristics and selector properties by varying forming polarities in a single HfO2-based RRAM device with a vanadium electrode.
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2017 nî lūn-bûn
@nan
2017年の論文
@ja
2017年論文
@yue
2017年論文
@zh-hant
2017年論文
@zh-hk
2017年論文
@zh-mo
2017年論文
@zh-tw
2017年论文
@wuu
2017年论文
@zh
2017年论文
@zh-cn
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Attaining resistive switching ...... ice with a vanadium electrode.
@en
type
label
Attaining resistive switching ...... ice with a vanadium electrode.
@en
prefLabel
Attaining resistive switching ...... ice with a vanadium electrode.
@en
P2093
P2860
P356
P1433
P1476
Attaining resistive switching ...... ice with a vanadium electrode.
@en
P2093
Chih-Hung Pan
Chih-Yang Lin
Hui-Chun Huang
Kuan-Chang Chang
Min-Chen Chen
Po-Hsun Chen
Sheng-Dong Zhang
Simon M Sze
Ting-Chang Chang
Tsung-Ming Tsai
P2860
P304
P356
10.1039/C7NR02305G
P407
P577
2017-06-21T00:00:00Z