Modulation of nonlinear resistive switching behavior of a TaOx-based resistive device through interface engineering.
about
Customized binary and multi-level HfO2-x-based memristors tuned by oxidation conditions.Self-Compliant Bipolar Resistive Switching in SiN-Based Resistive Switching Memory.Scalable cross-point resistive switching memory and mechanism through an understanding of H2O2/glucose sensing using an IrOx/Al2O3/W structure.The current limit and self-rectification functionalities in the TiO2/HfO2 resistive switching material system.Ultralow power switching in a silicon-rich SiNy/SiNx double-layer resistive memory device.Dual Functions of V/SiO/AlO/pSi Device as Selector and Memory
P2860
Modulation of nonlinear resistive switching behavior of a TaOx-based resistive device through interface engineering.
description
2016 nî lūn-bûn
@nan
2016年の論文
@ja
2016年論文
@yue
2016年論文
@zh-hant
2016年論文
@zh-hk
2016年論文
@zh-mo
2016年論文
@zh-tw
2016年论文
@wuu
2016年论文
@zh
2016年论文
@zh-cn
name
Modulation of nonlinear resist ...... through interface engineering.
@en
type
label
Modulation of nonlinear resist ...... through interface engineering.
@en
prefLabel
Modulation of nonlinear resist ...... through interface engineering.
@en
P2093
P356
P1433
P1476
Modulation of nonlinear resist ...... through interface engineering.
@en
P2093
Yangyuan Wang
Yaotian Ling
Yichen Fang
Zhizhen Yu
Zongwei Wang
P304
P356
10.1088/1361-6528/28/5/055204
P577
2016-12-28T00:00:00Z