Ultralow power switching in a silicon-rich SiNy/SiNx double-layer resistive memory device.

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Memristic Characteristics from Bistable to Tristable Memory with Controllable Charge Trap Carbon Nanotubes.Effect of Bilayer CeO/ZnO and ZnO/CeO Heterostructures and Electroforming Polarity on Switching Properties of Non-volatile Memory Dual Functions of V/SiO/AlO/pSi Device as Selector and Memory

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P2860

Ultralow power switching in a silicon-rich SiNy/SiNx double-layer resistive memory device.

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http://www.wikidata.org/entity/Q47930610

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2017年学术文章

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Ultralow power switching in a ...... layer resistive memory device.

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Ultralow power switching in a ...... layer resistive memory device.

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Item

label

Ultralow power switching in a ...... layer resistive memory device.

@en

Ultralow power switching in a ...... layer resistive memory device.

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Ultralow power switching in a ...... layer resistive memory device.

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Ultralow power switching in a ...... layer resistive memory device.

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P1476

Ultralow power switching in a silicon-rich SiNy/SiNx double-layer resistive memory device

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P2093

Jong-Ho Lee

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Min-Hwi Kim

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Suhyun Bang

http://www.w3.org/2001/XMLSchema#string

Tae-Hyeon Kim

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P2860

Complementary resistive switches for passive nanocrossbar memories

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

Resistive switching in silicon suboxide films

Physical and chemical mechanisms in oxide-based resistance random access memory.

Statistical characteristics of reset switching in Cu/HfO2/Pt resistive switching memory.

a-SiNx:H-based ultra-low power resistive random access memory with tunable Si dangling bond conduction paths.

Demonstration of Synaptic Behaviors and Resistive Switching Characterizations by Proton Exchange Reactions in Silicon Oxide.

Power- and Low-Resistance-State-Dependent, Bipolar Reset-Switching Transitions in SiN-Based Resistive Random-Access Memory

Modulation of nonlinear resistive switching behavior of a TaOx-based resistive device through interface engineering.

A study of the interfacial resistive switching mechanism by proton exchange reactions on the SiO(x) layer.

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18988-18995

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scholarly article

P356

10.1039/C7CP03120C

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English

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2017-07-01T00:00:00Z

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28702540

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Ultralow power switching in a silicon-rich SiNy/SiNx double-layer resistive memory device.

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P2860

P2860

Ultralow power switching in a silicon-rich SiNy/SiNx double-layer resistive memory device.

description

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type

label

prefLabel

P1433

P1476

P2093

P2860

P304

P31

P356

P407

P433

P478

P50

P577

P698

P356

P1433

P1476

P2093

P2860

P304

P31

P356

P407

P433

P478

P50

P577

P698