A study of the interfacial resistive switching mechanism by proton exchange reactions on the SiO(x) layer.
about
Study of the presence of spherical deformations on the Al top electrode due to electroforming in rewritable organic resistive memories.Ultralow power switching in a silicon-rich SiNy/SiNx double-layer resistive memory device.Multiple resistive switching in core–shell ZnO nanowires exhibiting tunable surface states
P2860
A study of the interfacial resistive switching mechanism by proton exchange reactions on the SiO(x) layer.
description
2015 nî lūn-bûn
@nan
2015年の論文
@ja
2015年学术文章
@wuu
2015年学术文章
@zh-cn
2015年学术文章
@zh-hans
2015年学术文章
@zh-my
2015年学术文章
@zh-sg
2015年學術文章
@yue
2015年學術文章
@zh
2015年學術文章
@zh-hant
name
A study of the interfacial res ...... reactions on the SiO(x) layer.
@en
type
label
A study of the interfacial res ...... reactions on the SiO(x) layer.
@en
prefLabel
A study of the interfacial res ...... reactions on the SiO(x) layer.
@en
P2093
P2860
P356
P1476
A study of the interfacial res ...... reactions on the SiO(x) layer.
@en
P2093
Burt Fowler
Jack C Lee
Xiaohan Wu
Ying-Chen Chen
P2860
P304
P356
10.1039/C5CP06507K
P407
P577
2015-12-14T00:00:00Z