Suppression of thermally activated carrier transport in atomically thin MoS2 on crystalline hexagonal boron nitride substrates
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Synthesis and Characterization of Hexagonal Boron Nitride as a Gate DielectricThermal Conductance of the 2D MoS2/h-BN and graphene/h-BN Interfaces.Electrically Tunable and Negative Schottky Barriers in Multi-layered Graphene/MoS2 Heterostructured Transistors.Electronic transport properties of transition metal dichalcogenide field-effect devices: surface and interface effects.Charge transport and mobility engineering in two-dimensional transition metal chalcogenide semiconductors.Towards intrinsic charge transport in monolayer molybdenum disulfide by defect and interface engineering.Theoretical prediction of high electron mobility in multilayer MoS2 heterostructured with MoSe2.Transport properties of pristine few-layer black phosphorus by van der Waals passivation in an inert atmosphere.Transport properties of unrestricted carriers in bridge-channel MoS2 field-effect transistors.2D layered group IIIA metal chalcogenides: synthesis, properties and applications in electronics and optoelectronics
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Q28828928-4E875634-F592-441F-81DE-B273E33BF6B3Q30361585-C9E4068A-8236-4A78-A805-39B7DDA0CCEDQ36022834-68900FE0-5B95-43E7-ACE3-0DDC433762F3Q38531628-2B1FBF56-D747-47B6-BCE0-44F1980C9911Q38643122-C93C1574-1288-4CFE-81A1-C4E2D76E6D20Q39110944-76DBAE49-7996-4B17-A12D-58B08558C6B7Q47196779-2B7F4933-4E2E-4803-980B-A795E7F422EDQ48204162-31DDD88D-395A-4B06-BF16-5EDF924887A9Q51694125-0C44CD4B-A7F5-496E-B6CA-7A183361313FQ58202273-7C9D5346-5F3C-45DD-AFD6-FC3460EA9F98
P2860
Suppression of thermally activated carrier transport in atomically thin MoS2 on crystalline hexagonal boron nitride substrates
description
im Januar 2013 veröffentlichter wissenschaftlicher Artikel
@de
wetenschappelijk artikel
@nl
наукова стаття, опублікована у 2013
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name
Suppression of thermally activ ...... gonal boron nitride substrates
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Suppression of thermally activ ...... gonal boron nitride substrates
@nl
type
label
Suppression of thermally activ ...... gonal boron nitride substrates
@en
Suppression of thermally activ ...... gonal boron nitride substrates
@nl
prefLabel
Suppression of thermally activ ...... gonal boron nitride substrates
@en
Suppression of thermally activ ...... gonal boron nitride substrates
@nl
P2093
P2860
P50
P356
P1433
P1476
Suppression of thermally activ ...... gonal boron nitride substrates
@en
P2093
Alex Aparecido-Ferreira
Hiromi Kuramochi
Kazuhito Tsukagoshi
Mei Yin Chan
Peter Darmawan
P2860
P356
10.1039/C3NR03220E
P407
P577
2013-01-01T00:00:00Z