New first order Raman-active modes in few layered transition metal dichalcogenides.
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A Self-Limiting Electro-Ablation Technique for the Top-Down Synthesis of Large-Area Monolayer Flakes of 2D Materials.Probing the origin of excitonic states in monolayer WSe2.Structural, electronic and vibrational properties of few-layer 2H- and 1T-TaSe2.Optical Limiting and Theoretical Modelling of Layered Transition Metal Dichalcogenide Nanosheets.Controllable synthesis of molybdenum tungsten disulfide alloy for vertically composition-controlled multilayerGiant photoluminescence enhancement in tungsten-diselenide-gold plasmonic hybrid structures.Mapping of Low-Frequency Raman Modes in CVD-Grown Transition Metal Dichalcogenides: Layer Number, Stacking Orientation and Resonant EffectsExfoliation and Raman Spectroscopic Fingerprint of Few-Layer NiPS3 Van der Waals CrystalsCasimir force phase transitions in the graphene family.Chemical Vapor Deposition of Monolayer Mo(1-x)W(x)S2 Crystals with Tunable Band Gaps.Charge transport and mobility engineering in two-dimensional transition metal chalcogenide semiconductors.Single- and few-layer WTe2 and their suspended nanostructures: Raman signatures and nanomechanical resonances.Negative Differential Conductance & Hot-Carrier Avalanching in Monolayer WS2 FETs.A Facile Way to Fabricate High-Performance Solution-Processed n-MoS2/p-MoS2 Bilayer PhotodetectorsLarge-scale quantum-emitter arrays in atomically thin semiconductorsTuning Coupling Behavior of Stacked Heterostructures Based on MoS2, WS2, and WSe2.Plasmon-trion and plasmon-exciton resonance energy transfer from a single plasmonic nanoparticle to monolayer MoS2.Layering effects on low frequency modes in n-layered MX2 transition metal dichalcogenides.First-principles simulation of local response in transition metal dichalcogenides under electron irradiation.Tuning electronic transport in epitaxial graphene-based van der Waals heterostructures.Shubnikov-de Haas Oscillations of High-Mobility Holes in Monolayer and Bilayer WSe_{2}: Landau Level Degeneracy, Effective Mass, and Negative Compressibility.Field-effect transistors based on wafer-scale, highly uniform few-layer p-type WSe2.Experimental Evidence for Dark Excitons in Monolayer WSe_{2}.Synthesis and enhanced electrochemical catalytic performance of monolayer WS2(1-x) Se2x with a tunable band gap.Seed growth of tungsten diselenide nanotubes from tungsten oxides.Perpendicularly oriented MoSe2 /graphene nanosheets as advanced electrocatalysts for hydrogen evolution.High-Performance Solid-State Thermionic Energy Conversion Based on 2D van der Waals Heterostructures: A First-Principles Study.Excitonic Emission of Monolayer Semiconductors Near-Field Coupled to High-Q Microresonators.Layer-Number Dependent Optical Properties of 2D Materials and Their Application for Thickness DeterminationGraphene/MoS2Heterostructures for Ultrasensitive Detection of DNA HybridisationTwo-dimensional transition metal dichalcogenide-based counter electrodes for dye-sensitized solar cellsMolecular beam epitaxy growth of monolayer niobium diselenide flakesComparison of liquid exfoliated transition metal dichalcogenides reveals MoSe2to be the most effective hydrogen evolution catalystLow wavenumber Raman spectroscopy of highly crystalline MoSe2grown by chemical vapor depositionCharge-tuneable biexciton complexes in monolayer WSe
P2860
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P2860
New first order Raman-active modes in few layered transition metal dichalcogenides.
description
2014 nî lūn-bûn
@nan
2014年の論文
@ja
2014年論文
@yue
2014年論文
@zh-hant
2014年論文
@zh-hk
2014年論文
@zh-mo
2014年論文
@zh-tw
2014年论文
@wuu
2014年论文
@zh
2014年论文
@zh-cn
name
New first order Raman-active modes in few layered transition metal dichalcogenides.
@en
New first order Raman-active modes in few layered transition metal dichalcogenides.
@nl
type
label
New first order Raman-active modes in few layered transition metal dichalcogenides.
@en
New first order Raman-active modes in few layered transition metal dichalcogenides.
@nl
prefLabel
New first order Raman-active modes in few layered transition metal dichalcogenides.
@en
New first order Raman-active modes in few layered transition metal dichalcogenides.
@nl
P2093
P2860
P50
P356
P1433
P1476
New first order Raman-active modes in few layered transition metal dichalcogenides.
@en
P2093
E Del Corro
J M Poumirol
M A T Nguyen
N R Pradhan
T E Mallouk
P2860
P2888
P356
10.1038/SREP04215
P407
P577
2014-02-27T00:00:00Z
P5875
P6179
1009866802