In situ auger electron spectroscopy study of atomic layer deposition: growth initiation and interface formation reactions during ruthenium ALD on Si-H, SiO2, and HfO2 surfaces.
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In situ auger electron spectroscopy study of atomic layer deposition: growth initiation and interface formation reactions during ruthenium ALD on Si-H, SiO2, and HfO2 surfaces.
description
2007 nî lūn-bûn
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2007年の論文
@ja
2007年学术文章
@wuu
2007年学术文章
@zh
2007年学术文章
@zh-cn
2007年学术文章
@zh-hans
2007年学术文章
@zh-my
2007年学术文章
@zh-sg
2007年學術文章
@yue
2007年學術文章
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name
In situ auger electron spectro ...... Si-H, SiO2, and HfO2 surfaces.
@en
In situ auger electron spectro ...... Si-H, SiO2, and HfO2 surfaces.
@nl
type
label
In situ auger electron spectro ...... Si-H, SiO2, and HfO2 surfaces.
@en
In situ auger electron spectro ...... Si-H, SiO2, and HfO2 surfaces.
@nl
prefLabel
In situ auger electron spectro ...... Si-H, SiO2, and HfO2 surfaces.
@en
In situ auger electron spectro ...... Si-H, SiO2, and HfO2 surfaces.
@nl
P2093
P356
P1433
P1476
In situ auger electron spectro ...... Si-H, SiO2, and HfO2 surfaces.
@en
P2093
David B Terry
Kie Jin Park
S Michael Stewart
P304
P356
10.1021/LA061898U
P407
P577
2007-04-27T00:00:00Z