Low-field Switching Four-state Nonvolatile Memory Based on Multiferroic Tunnel Junctions.

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Transport properties and electroresistance of a manganite based heterostructure: role of the manganite-manganite interface.

P2860

Q39674892-13E8CBAB-3E76-4D7B-BA4D-9CDD39900831

P2860

Low-field Switching Four-state Nonvolatile Memory Based on Multiferroic Tunnel Junctions.

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@yue

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name

Low-field Switching Four-state Nonvolatile Memory Based on Multiferroic Tunnel Junctions.

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Low-field Switching Four-state Nonvolatile Memory Based on Multiferroic Tunnel Junctions.

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type

Item

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Low-field Switching Four-state Nonvolatile Memory Based on Multiferroic Tunnel Junctions.

@ast

Low-field Switching Four-state Nonvolatile Memory Based on Multiferroic Tunnel Junctions.

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Low-field Switching Four-state Nonvolatile Memory Based on Multiferroic Tunnel Junctions.

@ast

Low-field Switching Four-state Nonvolatile Memory Based on Multiferroic Tunnel Junctions.

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P1476

Low-field Switching Four-state Nonvolatile Memory Based on Multiferroic Tunnel Junctions

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P2093

C M Wong

http://www.w3.org/2001/XMLSchema#string

F Y Zhang

http://www.w3.org/2001/XMLSchema#string

H M Yau

http://www.w3.org/2001/XMLSchema#string

K Au

http://www.w3.org/2001/XMLSchema#string

X S Gao

http://www.w3.org/2001/XMLSchema#string

Z B Yan

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P2860

Giant Electroresistance in Ferroelectric Tunnel Junctions

Giant tunnel electroresistance for non-destructive readout of ferroelectric states

Polarization control of electron tunneling into ferroelectric surfaces.

Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions.

A ferroelectric memristor.

Interface-induced room-temperature multiferroicity in BaTiO₃.

Solid-state memories based on ferroelectric tunnel junctions.

Ferroelectric tunnel junctions: Beyond the barrier.

Enhanced tunnelling electroresistance effect due to a ferroelectrically induced phase transition at a magnetic complex oxide interface.

Ferroelectric tunnel junctions for information storage and processing.

P2888

srep12826

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12826

http://www.w3.org/2001/XMLSchema#string

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scholarly article

P356

10.1038/SREP12826

http://www.w3.org/2001/XMLSchema#string

P407

English

P478

http://www.w3.org/2001/XMLSchema#string

P50

Jiyan Dai

Ngai Yui Chan

Chi Wah (dennis) Leung

P577

2015-08-04T00:00:00Z

http://www.w3.org/2001/XMLSchema#dateTime

P698

26239505

http://www.w3.org/2001/XMLSchema#string

P932

4523833

http://www.w3.org/2001/XMLSchema#string

Low-field Switching Four-state Nonvolatile Memory Based on Multiferroic Tunnel Junctions.

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P2860

P2860

Low-field Switching Four-state Nonvolatile Memory Based on Multiferroic Tunnel Junctions.

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type

label

prefLabel

P1433

P1476

P2093

P2860

P2888

P304

P31

P356

P407

P478

P50

P577

P698

P932

P356

P1433

P1476

P2093

P2860

P2888

P304

P31

P356

P407

P478

P50

P577

P698

P932