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Mobility determination of lead isotopes in glass for retrospective radon measurements.Aluminum oxide/titanium dioxide nanolaminates grown by atomic layer deposition: Growth and mechanical propertiesAluminum oxide from trimethylaluminum and water by atomic layer deposition: The temperature dependence of residual stress, elastic modulus, hardness and adhesionPlasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmasProperties of AlN grown by plasma enhanced atomic layer depositionHeavy ion induced Ti X-ray satellite structure for Ti, TiN, and TiO2 thin filmsEnergy loss and straggling of MeV Si ions in gasesOzone-Based Atomic Layer Deposition of Al2 O3 from Dimethylaluminum Chloride and Its Impact on Silicon Surface PassivationStability, sub-gap current, 1/f-noise, and elemental depth profiling of annealed Al:Mn-AlOX-Al normal metal-insulator-superconducting tunnel junctionsCoating and functionalization of high density ion track structures by atomic layer depositionBroadband Ultrahigh-Resolution Spectroscopy of Particle-Induced X Rays: Extending the Limits of Nondestructive AnalysisAlkylsilyl compounds as enablers of atomic layer deposition: analysis of (Et3Si)3As through the GaAs processCharacterization and Electrochemical Properties of Oxygenated Amorphous Carbon (a-C) FilmsExcellent silicon surface passivation using dimethylaluminium chloride as Al source for atomic layer deposited Al2O3Atomic layer deposited lithium aluminum oxide: (In)dependency of film properties from pulsing sequenceEffect of ozone concentration on silicon surface passivation by atomic layer deposited Al 2 O 3Secondary electron flight times and tracks in the carbon foil time pick-up detectorTime-of-flight – Energy spectrometer for elemental depth profiling – Jyväskylä designTime-of-flight ERD with a 200mm2 Si3N4 window gas ionization chamber energy detectorCorrection to “Atomic Layer Deposition of Spinel Lithium Manganese Oxide by Film-Body-Controlled Lithium Incorporation for Thin-Film Lithium-Ion Batteries”Trajectory bending and energy spreading of charged ions in time-of-flight telescopes used for ion beam analysisAtomic Layer Deposition of Spinel Lithium Manganese Oxide by Film-Body-Controlled Lithium Incorporation for Thin-Film Lithium-Ion BatteriesTransition-Edge Sensors for Particle Induced X-ray Emission MeasurementsEnergy-loss straggling of 2–10 MeV/u Kr ions in gasesAtomic layer deposition of LixTiyOz thin filmsAdvanced time-stamped total data acquisition control front-end for MeV ion beam microscopy and proton beam writingWhy are hydrogen ions best for MeV ion beam lithography?Influence of titanium-substrate roughness on Ca–P–O thin films grown by atomic layer depositionVariation of lattice constant and cluster formation in GaAsBiDevelopment of the Jyväskylä microbeam facilityLithography exposure characteristics of poly(methyl methacrylate) (PMMA) for carbon, helium and hydrogen ionsAtomic layer deposition of Ru films from bis(2,5-dimethylpyrrolyl)ruthenium and oxygenPorous inorganic–organic hybrid material by oxygen plasma treatmentAtomic Layer Deposition of Ruthenium Films from (Ethylcyclopentadienyl)(pyrrolyl)ruthenium and OxygenControlling the Crystallinity and Roughness of Atomic Layer Deposited Titanium Dioxide FilmsDepth profiling of Al2O3+TiO2 nanolaminates by means of a time-of-flight energy spectrometerControl of Oxygen Nonstoichiometry and Magnetic Property of MnCo2O4Thin Films Grown by Atomic Layer DepositionDevelopment of micro-contact printing of osteosarcoma cells using MeV ion beam lithographyFabrication of microfluidic devices using MeV ion beam Programmable Proximity Aperture Lithography (PPAL)Programmable proximity aperture lithography with MeV ion beams
P50
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P50
description
researcher
@en
wetenschapper
@nl
հետազոտող
@hy
name
Mikko Laitinen
@ast
Mikko Laitinen
@en
Mikko Laitinen
@es
Mikko Laitinen
@nl
type
label
Mikko Laitinen
@ast
Mikko Laitinen
@en
Mikko Laitinen
@es
Mikko Laitinen
@nl
prefLabel
Mikko Laitinen
@ast
Mikko Laitinen
@en
Mikko Laitinen
@es
Mikko Laitinen
@nl
P106
P31
P496
0000-0002-9031-8551