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Analog Synaptic Behavior of a Silicon Nitride Memristor.Ultralow power switching in a silicon-rich SiNy/SiNx double-layer resistive memory device.Scaling Effect on Silicon Nitride Memristor with Highly Doped Si Substrate.Effect of Bilayer CeO/ZnO and ZnO/CeO Heterostructures and Electroforming Polarity on Switching Properties of Non-volatile MemoryDual Functions of V/SiO/AlO/pSi Device as Selector and MemoryEradicating negative-set behavior of TiO2-based devices by inserting an oxygen vacancy rich zirconium oxide layer for data storage applications
P50
description
researcher
@en
wetenschapper
@nl
name
Sungjun Kim
@en
Sungjun Kim
@nl
type
label
Sungjun Kim
@en
Sungjun Kim
@nl
prefLabel
Sungjun Kim
@en
Sungjun Kim
@nl
P31
P496
0000-0002-9873-2474