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Q33856684-06AC590F-393C-4231-AF48-864A0B1442E3
Q33856684-06AC590F-393C-4231-AF48-864A0B1442E3
BestRank
Statement
http://www.wikidata.org/entity/statement/Q33856684-06AC590F-393C-4231-AF48-864A0B1442E3
Highly Oriented Atomically Thin Ambipolar MoSe2 Grown by Molecular Beam Epitaxy.
P2860
Q33856684-06AC590F-393C-4231-AF48-864A0B1442E3
BestRank
Statement
http://www.wikidata.org/entity/statement/Q33856684-06AC590F-393C-4231-AF48-864A0B1442E3
rank
NormalRank
type
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Statement
wasDerivedFrom
3b763529be32942e3daca540586a616ac4c37361
P2860
Atomically Thin MoS 2 : A New Direct-Gap Semiconductor