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Q58337267-C2859DEB-0F8E-489C-9AA7-B2EA6181A7EA
Q58337267-C2859DEB-0F8E-489C-9AA7-B2EA6181A7EA
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http://www.wikidata.org/entity/statement/Q58337267-C2859DEB-0F8E-489C-9AA7-B2EA6181A7EA
Gate-modulated conductance of few-layer WSe2 field-effect transistors in the subgap regime: Schottky barrier transistor and subgap impurity states
P2860
Q58337267-C2859DEB-0F8E-489C-9AA7-B2EA6181A7EA
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Statement
http://www.wikidata.org/entity/statement/Q58337267-C2859DEB-0F8E-489C-9AA7-B2EA6181A7EA
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674ac97d1ac68bfea65f21216760e2aafbd2ca68
P2860
MoS₂ P-type transistors and diodes enabled by high work function MoOx contacts.