Electronic resistance switching in the Al/TiO(x)/Al structure for forming-free and area-scalable memory.
about
Bias-polarity-dependent resistance switching in W/SiO2/Pt and W/SiO2/Si/Pt structures.The role of ion transport phenomena in memristive double barrier devices.Point contact resistive switching memory based on self-formed interface of Al/ITO.A study of the transition between the non-polar and bipolar resistance switching mechanisms in the TiN/TiO2/Al memory.Demonstration of Ultra-Fast Switching in Nanometallic Resistive Switching Memory Devices
P2860
Electronic resistance switching in the Al/TiO(x)/Al structure for forming-free and area-scalable memory.
description
2015 nî lūn-bûn
@nan
2015年の論文
@ja
2015年学术文章
@wuu
2015年学术文章
@zh
2015年学术文章
@zh-cn
2015年学术文章
@zh-hans
2015年学术文章
@zh-my
2015年学术文章
@zh-sg
2015年學術文章
@yue
2015年學術文章
@zh-hant
name
Electronic resistance switching in the Al/TiO
@nl
Electronic resistance switchin ...... free and area-scalable memory.
@en
type
label
Electronic resistance switching in the Al/TiO
@nl
Electronic resistance switchin ...... free and area-scalable memory.
@en
prefLabel
Electronic resistance switching in the Al/TiO
@nl
Electronic resistance switchin ...... free and area-scalable memory.
@en
P2093
P2860
P356
P1433
P1476
Electronic resistance switchin ...... -free and area-scalable memory
@en
P2093
Cheol Seong Hwang
Jin Shi Zhao
Li Wei Zhou
Sijung Yoo
Xing Long Shao
P2860
P304
11063-11074
P356
10.1039/C4NR06417H
P407
P577
2015-07-01T00:00:00Z