Nanobatteries in redox-based resistive switches require extension of memristor theory - Wikidata - wikimedia - TriplyDB

Nanobatteries in redox-based resistive switches require extension of memristor theory

Nanobatteries in redox-based resistive switches require extension of memristor theory

http://www.wikidata.org/entity/Q28289484

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Simulation of synaptic short-term plasticity using Ba(CF3SO3)2-doped polyethylene oxide electrolyte film.Probing nanoscale oxygen ion motion in memristive systems Pavlovian conditioning demonstrated with neuromorphic memristive devices Smart Fluid Systems: The Advent of Autonomous Liquid Robotics.Ultra-thin resistive switching oxide layers self-assembled by field-induced oxygen migration (FIOM) technique Low-energy Resistive Random Access Memory Devices with No Need for a Compliance Current.Conductance Quantization in Resistive Random Access Memory.PMMA interlayer-modulated memory effects by space charge polarization in resistive switching based on CuSCN-nanopyramids/ZnO-nanorods p-n heterojunction.Iodine Vacancy Redistribution in Organic-Inorganic Halide Perovskite Films and Resistive Switching Effects.Demonstration of Synaptic Behaviors and Resistive Switching Characterizations by Proton Exchange Reactions in Silicon Oxide.Self-assembled oxide films with tailored nanoscale ionic and electronic channels for controlled resistive switching.Stability and its mechanism in Ag/CoOx/Ag interface-type resistive switching device.Long-Term Homeostatic Properties Complementary to Hebbian Rules in CuPc-Based Multifunctional Memristor.Memory impedance in TiO2 based metal-insulator-metal devices.Enabling an integrated rate-temporal learning scheme on memristor.Emulating the Electrical Activity of the Neuron Using a Silicon Oxide RRAM Cell.Flexible Ionic-Electronic Hybrid Oxide Synaptic TFTs with Programmable Dynamic Plasticity for Brain-Inspired Neuromorphic Computing.Physical origins and suppression of Ag dissolution in GeS(x)-based ECM cells.Memristor models for machine learning.Ag/GeSx/Pt-based complementary resistive switches for hybrid CMOS/nanoelectronic logic and memory architectures.Cellulose nanofiber paper as an ultra flexible nonvolatile memory Memristive and neuromorphic behavior in a Li(x)CoO2 nanobattery.Interactive models of communication at the nanoscale using nanoparticles that talk to one another.Bipolar switching polarity reversal by electrolyte layer sequence in electrochemical metallization cells with dual-layer solid electrolytes.Analytical analysis of the generic SET and RESET characteristics of electrochemical metallization memory cells.Complex dynamics of memristive circuits: Analytical results and universal slow relaxation.Embedded nanoparticle dynamics and their influence on switching behaviour of resistive memory devices.On-Demand Reconfiguration of Nanomaterials: When Electronics Meets Ionics.Scalability of voltage-controlled filamentary and nanometallic resistance memory devices.Nanometer-Scale Phase Transformation Determines Threshold and Memory Switching Mechanism.Electrochemical-reaction-induced synaptic plasticity in MoOx-based solid state electrochemical cells.Locality of interactions for planar memristive circuits.Confining Cation Injection to Enhance CBRAM Performance by Nanopore Graphene Layer.Anatomy of Ag/Hafnia-Based Selectors with 1010 Nonlinearity.Direct Observations of Nanofilament Evolution in Switching Processes in HfO2 -Based Resistive Random Access Memory by In Situ TEM Studies.Eliminating Negative-SET Behavior by Suppressing Nanofilament Overgrowth in Cation-Based Memory.Moisture effects on the electrochemical reaction and resistance switching at Ag/molybdenum oxide interfaces.Nanoscale Plasmon-Enhanced Spectroscopy in Memristive Switches.Understanding filamentary growth in electrochemical metallization memory cells using kinetic Monte Carlo simulations.Forming-free and self-rectifying resistive switching of the simple Pt/TaOx/n-Si structure for access device-free high-density memory application.

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Nanobatteries in redox-based resistive switches require extension of memristor theory

http://www.wikidata.org/entity/Q28289484

description

2013 nî lūn-bûn

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2013 թուականին հրատարակուած գիտական յօդուած

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2013 թվականին հրատարակված գիտական հոդված

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2013年の論文

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name

Nanobatteries in redox-based resistive switches require extension of memristor theory

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Nanobatteries in redox-based resistive switches require extension of memristor theory

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Nanobatteries in redox-based resistive switches require extension of memristor theory

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Nanobatteries in redox-based resistive switches require extension of memristor theory

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Nanobatteries in redox-based resistive switches require extension of memristor theory

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Nanobatteries in redox-based resistive switches require extension of memristor theory

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Nanobatteries in redox-based resistive switches require extension of memristor theory

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Nanobatteries in redox-based resistive switches require extension of memristor theory

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Nanobatteries in redox-based resistive switches require extension of memristor theory

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Nature Communications

P1476

Nanobatteries in redox-based resistive switches require extension of memristor theory

@en

P2093

E Linn

http://www.w3.org/2001/XMLSchema#string

F Lentz

http://www.w3.org/2001/XMLSchema#string

I Valov

http://www.w3.org/2001/XMLSchema#string

J van den Hurk

http://www.w3.org/2001/XMLSchema#string

R Waser

http://www.w3.org/2001/XMLSchema#string

S Schmelzer

http://www.w3.org/2001/XMLSchema#string

S Tappertzhofen

http://www.w3.org/2001/XMLSchema#string

P2860

Nanoionics-based resistive switching memories

Complementary resistive switches for passive nanocrossbar memories

Atomically controlled electrochemical nucleation at superionic solid electrolyte surfaces.

'Memristive' switches enable 'stateful' logic operations via material implication.

The missing memristor found.

Electrochemical metallization memories--fundamentals, applications, prospects.

Memristive devices for computing.

Direct observation of charge transfer in solid electrolyte for electrochemical metallization memory.

Short-term plasticity and long-term potentiation mimicked in single inorganic synapses.

Resistive switching in nanogap systems on SiO2 substrates.

P2888

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1771

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scholarly article

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2892891

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10.1038/NCOMMS2784

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P407

P478

4

http://www.w3.org/2001/XMLSchema#string

P577

2013-01-01T00:00:00Z

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1007493576

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P698

23612312

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P818

1303.2589

http://www.w3.org/2001/XMLSchema#string

P932

3644102

http://www.w3.org/2001/XMLSchema#string