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Study of multi-level characteristics for 3D vertical resistive switching memory

Study of multi-level characteristics for 3D vertical resistive switching memory

http://www.wikidata.org/entity/Q33929001

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A learnable parallel processing architecture towards unity of memory and computing.Thermal crosstalk in 3-dimensional RRAM crossbar array.Stacked 3D RRAM Array with Graphene/CNT as Edge Electrodes.Graphene/h-BN Heterostructures for Vertical Architecture of RRAM Design.Intrinsic anionic rearrangement by extrinsic control: transition of RS and CRS in thermally elevated TiN/HfO2/Pt RRAM.Scalable cross-point resistive switching memory and mechanism through an understanding of H2O2/glucose sensing using an IrOx/Al2O3/W structure.Four-Bits-Per-Cell Operation in an HfO2 -Based Resistive Switching Device.

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Study of multi-level characteristics for 3D vertical resistive switching memory

http://www.wikidata.org/entity/Q33929001

description

2014 nî lūn-bûn

@nan

2014 թուականի Յուլիսին հրատարակուած գիտական յօդուած

@hyw

2014 թվականի հուլիսին հրատարակված գիտական հոդված

@hy

2014年の論文

@ja

2014年学术文章

@wuu

2014年学术文章

@zh-cn

2014年学术文章

@zh-hans

2014年学术文章

@zh-my

2014年学术文章

@zh-sg

2014年學術文章

@yue

name

Study of multi-level characteristics for 3D vertical resistive switching memory

@ast

Study of multi-level characteristics for 3D vertical resistive switching memory

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type

label

Study of multi-level characteristics for 3D vertical resistive switching memory

@ast

Study of multi-level characteristics for 3D vertical resistive switching memory

@en

prefLabel

Study of multi-level characteristics for 3D vertical resistive switching memory

@ast

Study of multi-level characteristics for 3D vertical resistive switching memory

@en

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Scientific Reports

P1476

Study of multi-level characteristics for 3D vertical resistive switching memory

@en

P2093

He Qian

http://www.w3.org/2001/XMLSchema#string

Huaqiang Wu

http://www.w3.org/2001/XMLSchema#string

Ning Deng

http://www.w3.org/2001/XMLSchema#string

Riga Wu

http://www.w3.org/2001/XMLSchema#string

Ye Zhang

http://www.w3.org/2001/XMLSchema#string

Yue Bai

http://www.w3.org/2001/XMLSchema#string

Zhiping Yu

http://www.w3.org/2001/XMLSchema#string

P2860

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

Evolution of conduction channel and its effect on resistance switching for Au-WO₃-x-Au devices.

Memristive devices for computing.

Random telegraph noise and resistance switching analysis of oxide based resistive memory.

HfOx-based vertical resistive switching random access memory suitable for bit-cost-effective three-dimensional cross-point architecture.

Scaling effect on unipolar and bipolar resistive switching of metal oxides.

Physical electro-thermal model of resistive switching in bi-layered resistance-change memory.

Voltage and power-controlled regimes in the progressive unipolar RESET transition of HfO₂-based RRAM.

Dynamic-load-enabled ultra-low power multiple-state RRAM devices.

Dynamic evolution of conducting nanofilament in resistive switching memories.

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5780

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scholarly article

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10.1038/SREP05780

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P407

P478

4

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2014-07-22T00:00:00Z

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264126799

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1025992398

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25047906

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P932

4105739

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