MoS₂ P-type transistors and diodes enabled by high work function MoOx contacts.
about
Electronic properties of MoS2/MoOx interfaces: Implications in Tunnel Field Effect Transistors and Hole ContactsElectroluminescence and photocurrent generation from atomically sharp WSe2/MoS2 heterojunction p-n diodes.Layered memristive and memcapacitive switches for printable electronics.Controllable Schottky barriers between MoS2 and permalloy.Influence of post-annealing on the off current of MoS2 field-effect transistorsA study of lateral Schottky contacts in WSe2 and MoS2 field effect transistors using scanning photocurrent microscopy.Electrically Tunable and Negative Schottky Barriers in Multi-layered Graphene/MoS2 Heterostructured Transistors.Polarity control in WSe2 double-gate transistors.Electronic transport properties of transition metal dichalcogenide field-effect devices: surface and interface effects.Electrical contacts to two-dimensional semiconductors.Progress of Large-Scale Synthesis and Electronic Device Application of Two-Dimensional Transition Metal Dichalcogenides.Progress on Electronic and Optoelectronic Devices of 2D Layered Semiconducting Materials.Surface Charge Transfer Doping of Low-Dimensional Nanostructures toward High-Performance Nanodevices.Towards intrinsic charge transport in monolayer molybdenum disulfide by defect and interface engineering.Multibit MoS2 Photoelectronic Memory with Ultrahigh Sensitivity.Monolayer MoS2 Bandgap Modulation by Dielectric Environments and Tunable Bandgap Transistors.A Facile Way to Fabricate High-Performance Solution-Processed n-MoS2/p-MoS2 Bilayer PhotodetectorsVacancy and Doping States in Monolayer and bulk Black Phosphorus.Gate-controlled reversible rectifying behaviour in tunnel contacted atomically-thin MoS2 transistorControlled doping of large-area trilayer MoS2 with molecular reductants and oxidants.Wafer-Scale Synthesis of Reliable High-Mobility Molybdenum Disulfide Thin Films via Inhibitor-Utilizing Atomic Layer Deposition.Non-invasively improving the Schottky barriers of metal-MoS2 interfaces: effects of atomic vacancies in a BN buffer layer.Controlling the electronic and geometric structures of 2D insertions to realize high performance metal/insertion-MoS2 sandwich interfaces.Various and Tunable Transport Properties of WSe2 Transistor Formed by Metal Contacts.Designing high performance metal-mMoS2 interfaces by two-dimensional insertions with suitable thickness.MoS2 /Rubrene van der Waals Heterostructure: Toward Ambipolar Field-Effect Transistors and Inverter Circuits.Engineering Bandgaps of Monolayer MoS2 and WS2 on Fluoropolymer Substrates by Electrostatically Tuned Many-Body Effects.Thermally Driven Pure Spin and Valley Currents via the Anomalous Nernst Effect in Monolayer Group-VI Dichalcogenides.Self-powered broadband, high-detectivity and ultrafast photodetectors based on Pd-MoS2/Si heterojunctions.Oxide-mediated recovery of field-effect mobility in plasma-treated MoS2.Enhancement of photodetection characteristics of MoS2 field effect transistors using surface treatment with copper phthalocyanine.Single-layer MoS2 formation by sulfidation of molybdenum oxides in different oxidation states on Au(111).Interface engineering for high-performance top-gated MoS2 field-effect transistors.Molybdenum oxide MoOx: A versatile hole contact for silicon solar cellsControlled Layer Thinning and p-Type Doping of WSe2 by Vapor XeF2Gate-modulated conductance of few-layer WSe2 field-effect transistors in the subgap regime: Schottky barrier transistor and subgap impurity statesCharge carrier injection and transport engineering in two-dimensional transition metal dichalcogenides
P2860
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P2860
MoS₂ P-type transistors and diodes enabled by high work function MoOx contacts.
description
2014 nî lūn-bûn
@nan
2014年の論文
@ja
2014年学术文章
@wuu
2014年学术文章
@zh-cn
2014年学术文章
@zh-hans
2014年学术文章
@zh-my
2014年学术文章
@zh-sg
2014年學術文章
@yue
2014年學術文章
@zh
2014年學術文章
@zh-hant
name
MoS₂ P-type transistors and diodes enabled by high work function MoOx contacts.
@en
MoS₂ P-type transistors and diodes enabled by high work function MoOx contacts.
@nl
type
label
MoS₂ P-type transistors and diodes enabled by high work function MoOx contacts.
@en
MoS₂ P-type transistors and diodes enabled by high work function MoOx contacts.
@nl
prefLabel
MoS₂ P-type transistors and diodes enabled by high work function MoOx contacts.
@en
MoS₂ P-type transistors and diodes enabled by high work function MoOx contacts.
@nl
P2093
P356
P1433
P1476
MoS₂ P-type transistors and diodes enabled by high work function MoOx contacts.
@en
P2093
Angelica Azcatl
Corsin Battaglia
Jeong Seuk Kang
Mahmut Tosun
Rehan Kapadia
Stephen McDonnell
Steven Chuang
P304
P356
10.1021/NL4043505
P407
P577
2014-02-27T00:00:00Z