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Towards Highly-Efficient Phototriggered Data Storage by Utilizing a Diketopyrrolopyrrole-Based Photoelectronic Small Molecule.Focused Role of an Organic Small-Molecule PBD on Performance of the Bistable Resistive SwitchingGraphene-ferroelectric metadevices for nonvolatile memory and reconfigurable logic-gate operations.Resistive Switching Memory Devices Based on Proteins.Analytical development and optimization of a graphene-solution interface capacitance model.Ultra-Lightweight Resistive Switching Memory Devices Based on Silk Fibroin.Stable charge storing in two-dimensional MoS2 nanoflake floating gates for multilevel organic flash memory.Giant magnetoelectric effect at the graphone/ferroelectric interfaceLiquid-Exfoliated Black Phosphorous Nanosheet Thin Films for Flexible Resistive Random Access Memory Applications
P2860
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P2860
description
2014 nî lūn-bûn
@nan
2014年の論文
@ja
2014年学术文章
@wuu
2014年学术文章
@zh-cn
2014年学术文章
@zh-hans
2014年学术文章
@zh-my
2014年学术文章
@zh-sg
2014年學術文章
@yue
2014年學術文章
@zh
2014年學術文章
@zh-hant
name
Graphene based non-volatile memory devices.
@en
Graphene based non-volatile memory devices.
@nl
type
label
Graphene based non-volatile memory devices.
@en
Graphene based non-volatile memory devices.
@nl
prefLabel
Graphene based non-volatile memory devices.
@en
Graphene based non-volatile memory devices.
@nl
P2860
P356
P1433
P1476
Graphene based non-volatile memory devices.
@en
P2093
Xiaomu Wang
P2860
P304
P356
10.1002/ADMA.201306041
P407
P577
2014-02-03T00:00:00Z