Super non-linear RRAM with ultra-low power for 3D vertical nano-crossbar arrays.

about

Time-decay Memristive Behavior and diffusive dynamics in one forget process operated by a 3D vertical Pt/Ta2O5-x/W device.A Collective Study on Modeling and Simulation of Resistive Random Access Memory.An artificial nociceptor based on a diffusive memristor.

P2860

Q33678096-AB6F4224-670E-40A2-9414-31D63878DDBC Q47739098-5F71E05A-C4B4-4197-BA3D-217CBD7519A5 Q48147540-70A00F6E-5AC2-4BEF-81A8-9F95ED8FC9B3

P2860

Super non-linear RRAM with ultra-low power for 3D vertical nano-crossbar arrays.

Item

http://www.wikidata.org/entity/Q39502993

description

2016 nî lūn-bûn

@nan

2016年の論文

@ja

2016年学术文章

@wuu

2016年学术文章

@zh-cn

2016年学术文章

@zh-hans

2016年学术文章

@zh-my

2016年学术文章

@zh-sg

2016年學術文章

@yue

2016年學術文章

@zh

2016年學術文章

@zh-hant

name

Super non-linear RRAM with ultra-low power for 3D vertical nano-crossbar arrays.

@en

Super non-linear RRAM with ultra-low power for 3D vertical nano-crossbar arrays.

@nl

type

Item

label

Super non-linear RRAM with ultra-low power for 3D vertical nano-crossbar arrays.

@en

Super non-linear RRAM with ultra-low power for 3D vertical nano-crossbar arrays.

@nl

prefLabel

Super non-linear RRAM with ultra-low power for 3D vertical nano-crossbar arrays.

@en

Super non-linear RRAM with ultra-low power for 3D vertical nano-crossbar arrays.

@nl

P1476

Super non-linear RRAM with ultra-low power for 3D vertical nano-crossbar arrays.

@en

P2093

Haitao Sun

http://www.w3.org/2001/XMLSchema#string

Hangbing Lv

http://www.w3.org/2001/XMLSchema#string

Hongtao Liu

http://www.w3.org/2001/XMLSchema#string

Jianfeng Gao

http://www.w3.org/2001/XMLSchema#string

Ling Li

http://www.w3.org/2001/XMLSchema#string

Ming Liu

http://www.w3.org/2001/XMLSchema#string

Nianduan Lu

http://www.w3.org/2001/XMLSchema#string

Qi Liu

http://www.w3.org/2001/XMLSchema#string

Qing Luo

http://www.w3.org/2001/XMLSchema#string

Shibing Long

http://www.w3.org/2001/XMLSchema#string

P2860

Complementary resistive switches for passive nanocrossbar memories

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

A functional hybrid memristor crossbar-array/CMOS system for data storage and neuromorphic applications.

'Memristive' switches enable 'stateful' logic operations via material implication.

Atomic View of Filament Growth in Electrochemical Memristive Elements

Evolution of conduction channel and its effect on resistance switching for Au-WO₃-x-Au devices.

Nanoscale resistive switching devices: mechanisms and modeling.

HfOx-based vertical resistive switching random access memory suitable for bit-cost-effective three-dimensional cross-point architecture.

Scaling effect on unipolar and bipolar resistive switching of metal oxides.

CMOS compatible nanoscale nonvolatile resistance switching memory.

P304

15629-15636

http://www.w3.org/2001/XMLSchema#string

P31

scholarly article

P356

10.1039/C6NR02029A

http://www.w3.org/2001/XMLSchema#string

P407

English

P433

http://www.w3.org/2001/XMLSchema#string

P478

http://www.w3.org/2001/XMLSchema#string

P577

2016-08-11T00:00:00Z

http://www.w3.org/2001/XMLSchema#dateTime

P698

27510434

http://www.w3.org/2001/XMLSchema#string

Super non-linear RRAM with ultra-low power for 3D vertical nano-crossbar arrays.

about

P2860

P2860

Super non-linear RRAM with ultra-low power for 3D vertical nano-crossbar arrays.

description

name

type

label

prefLabel

P1433

P1476

P2093

P2860

P304

P31

P356

P407

P433

P478

P577

P698

P356

P1433

P1476

P2093

P2860

P304

P31

P356

P407

P433

P478

P577

P698