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The growth scale and kinetics of WS2 monolayers under varying H2 concentrationElectrical contacts to two-dimensional semiconductors.The Integration of Sub-10 nm Gate Oxide on MoS2 with Ultra Low Leakage and Enhanced Mobility.Thickness-dependent mobility in two-dimensional MoS₂ transistors.Toward High-Performance Top-Gate Ultrathin HfS2 Field-Effect Transistors by Interface Engineering.Mechanisms of current fluctuation in ambipolar black phosphorus field-effect transistors.Large-Area Monolayer MoS2 for Flexible Low-Power RF Nanoelectronics in the GHz Regime.Mechanically robust 39 GHz cut-off frequency graphene field effect transistors on flexible substratesTwo-dimensional transition metal dichalcogenide-based counter electrodes for dye-sensitized solar cellsElectronic properties of transition-metal dichalcogenidesScalable high performance radio frequency electronics based on large domain bilayer MoSFree-standing electronic character of monolayerMoS2in van der Waals epitaxy
P2860
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P2860
description
2014 nî lūn-bûn
@nan
2014年の論文
@ja
2014年論文
@yue
2014年論文
@zh-hant
2014年論文
@zh-hk
2014年論文
@zh-mo
2014年論文
@zh-tw
2014年论文
@wuu
2014年论文
@zh
2014年论文
@zh-cn
name
MoS2 transistors operating at gigahertz frequencies.
@en
type
label
MoS2 transistors operating at gigahertz frequencies.
@en
prefLabel
MoS2 transistors operating at gigahertz frequencies.
@en
P2093
P356
P1433
P1476
MoS2 transistors operating at gigahertz frequencies.
@en
P2093
Clemens Nyffeler
Daria Krasnozhon
Dominik Lembke
Yusuf Leblebici
P304
P356
10.1021/NL5028638
P407
P50
P577
2014-09-22T00:00:00Z