Large-Area Monolayer MoS2 for Flexible Low-Power RF Nanoelectronics in the GHz Regime.
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Uncovering edge states and electrical inhomogeneity in MoS2 field-effect transistors.Flexible Device Applications of 2D Semiconductors.Single Crystalline Ultrathin Nickel-Cobalt Alloy Nanosheets Array for Direct Hydrazine Fuel Cells.Transport properties of the top and bottom surfaces in monolayer MoS2 grown by chemical vapor deposition.Zero-static power radio-frequency switches based on MoS2 atomristors.2D titanium carbide (MXene) for wireless communicationScalable high performance radio frequency electronics based on large domain bilayer MoS
P2860
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P2860
Large-Area Monolayer MoS2 for Flexible Low-Power RF Nanoelectronics in the GHz Regime.
description
2015 nî lūn-bûn
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name
Large-Area Monolayer MoS2 for Flexible Low-Power RF Nanoelectronics in the GHz Regime.
@en
Large-Area Monolayer MoS2 for Flexible Low-Power RF Nanoelectronics in the GHz Regime.
@nl
type
label
Large-Area Monolayer MoS2 for Flexible Low-Power RF Nanoelectronics in the GHz Regime.
@en
Large-Area Monolayer MoS2 for Flexible Low-Power RF Nanoelectronics in the GHz Regime.
@nl
prefLabel
Large-Area Monolayer MoS2 for Flexible Low-Power RF Nanoelectronics in the GHz Regime.
@en
Large-Area Monolayer MoS2 for Flexible Low-Power RF Nanoelectronics in the GHz Regime.
@nl
P2093
P2860
P356
P1433
P1476
Large-Area Monolayer MoS2 for Flexible Low-Power RF Nanoelectronics in the GHz Regime.
@en
P2093
Amritesh Rai
Atresh Sanne
Hsiao-Yu Chang
Maruthi Nagavalli Yogeesh
Rudresh Ghosh
Sanjay Kumar Banerjee
Shixuan Yang
P2860
P304
P356
10.1002/ADMA.201504309
P407
P577
2015-12-28T00:00:00Z