Tuning the bandgap of exfoliated InSe nanosheets by quantum confinement. - Wikidata - wikimedia - TriplyDB

Tuning the bandgap of exfoliated InSe nanosheets by quantum confinement.

Tuning the bandgap of exfoliated InSe nanosheets by quantum confinement.

http://www.wikidata.org/entity/Q40948556

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Ultrathin SnSe2 Flakes Grown by Chemical Vapor Deposition for High-Performance Photodetectors.Controlled vapor phase growth of single crystalline, two-dimensional GaSe crystals with high photoresponse.High broad-band photoresponsivity of mechanically formed InSe-graphene van der Waals heterostructures.Observing the interplay between surface and bulk optical nonlinearities in thin van der Waals crystals.Partial Oxidized Arsenene: Emerging Tunable Direct Bandgap Semiconductor.Booming Development of Group IV-VI Semiconductors: Fresh Blood of 2D Family.The direct-to-indirect band gap crossover in two-dimensional van der Waals Indium Selenide crystals.Indium selenides: structural characteristics, synthesis and their thermoelectric performances.Photocurrent generation with two-dimensional van der Waals semiconductors.Designing artificial 2D crystals with site and size controlled quantum dots.Fundamentals of lateral and vertical heterojunctions of atomically thin materials.Imaging the motion of electrons across semiconductor heterojunctions.Ultra-weak interlayer coupling in two-dimensional gallium selenide.Synthesis, properties and applications of 2D layered M(III)X(VI) (M = Ga, In; X = S, Se, Te) materials.Two-dimensional metal-chalcogenide films in tunable optical microcavities.Photoacoustic and modulated reflectance studies of indirect and direct band gap in van der Waals crystals.The Advent of Indium Selenide: Synthesis, Electronic Properties, Ambient Stability and Applications.Oxygen-induced degradation of the electronic properties of thin-layer InSe.Charging assisted structural phase transitions in monolayer InSe.Native defects and substitutional impurities in two-dimensional monolayer InSe.High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe.Enhancement of hole mobility in InSe monolayer via an InSe and black phosphorus heterostructure.Unusual phonon behavior and ultra-low thermal conductance of monolayer InSe.Defects and oxidation of group-III monochalcogenide monolayers.Giant Quantum Hall Plateau in Graphene Coupled to an InSe van der Waals Crystal.Enhanced quantum efficiency from a mosaic of two dimensional MoS2 formed onto aminosilane functionalised substrates.Optical design of ZnO-based antireflective layers for enhanced GaAs solar cell performance.A high performance graphene/few-layer InSe photo-detector.Strain induced new phase and indirect-direct band gap transition of monolayer InSe.Performance improvement of multilayer InSe transistors with optimized metal contacts.Back gated multilayer InSe transistors with enhanced carrier mobilities via the suppression of carrier scattering from a dielectric interface.Photodetectors Based on Two-Dimensional Layered Materials Beyond Graphene Controlled Synthesis of Ultrathin 2D β-In2 S3 with Broadband Photoresponse by Chemical Vapor Deposition 2D layered group IIIA metal chalcogenides: synthesis, properties and applications in electronics and optoelectronics Large-Size Growth of Ultrathin SnS2Nanosheets and High Performance for Phototransistors

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Tuning the bandgap of exfoliated InSe nanosheets by quantum confinement.

http://www.wikidata.org/entity/Q40948556

description

2013 nî lūn-bûn

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2013年の論文

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2013年論文

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2013年論文

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2013年論文

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2013年論文

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2013年論文

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2013年论文

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2013年论文

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2013年论文

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name

Tuning the bandgap of exfoliated InSe nanosheets by quantum confinement.

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type

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Tuning the bandgap of exfoliated InSe nanosheets by quantum confinement.

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prefLabel

Tuning the bandgap of exfoliated InSe nanosheets by quantum confinement.

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Advanced Materials

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Tuning the bandgap of exfoliated InSe nanosheets by quantum confinement.

@en

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Alexandr I Dmitriev

http://www.w3.org/2001/XMLSchema#string

Amalia Patanè

http://www.w3.org/2001/XMLSchema#string

Garry W Mudd

http://www.w3.org/2001/XMLSchema#string

George V Lashkarev

http://www.w3.org/2001/XMLSchema#string

Laurence Eaves

http://www.w3.org/2001/XMLSchema#string

Oleg Makarovsky

http://www.w3.org/2001/XMLSchema#string

Peter H Beton

http://www.w3.org/2001/XMLSchema#string

Simon A Svatek

http://www.w3.org/2001/XMLSchema#string

Tianhang Ren

http://www.w3.org/2001/XMLSchema#string

Zakhar D Kovalyuk

http://www.w3.org/2001/XMLSchema#string

P2860

Atomically Thin MoS 2 : A New Direct-Gap Semiconductor

Electric Field Effect in Atomically Thin Carbon Films

Two-dimensional atomic crystals

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides.

Emerging photoluminescence in monolayer MoS2.

Boron nitride substrates for high-quality graphene electronics.

Two-dimensional dielectric nanosheets: novel nanoelectronics from nanocrystal building blocks.

Synthesis of few-layer GaSe nanosheets for high performance photodetectors.

Nonvolatile memory cells based on MoS2/graphene heterostructures.

Thermally driven crossover from indirect toward direct bandgap in 2D semiconductors: MoSe2 versus MoS2.

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5714-5718

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scholarly article

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10.1002/ADMA.201302616

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40

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25

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2013-08-21T00:00:00Z

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256072607

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23966225

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4065344

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