High-performance programmable memory devices based on co-doped BaTiO3.

High-performance programmable memory devices based on co-doped BaTiO3.

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http://www.wikidata.org/entity/Q51017598
Negative voltage modulated multi-level resistive switching by using a Cr/BaTiOx/TiN structure and quantum conductance through evidence of H2O2 sensing mechanism.Integration of lead-free ferroelectric on HfO2/Si (100) for high performance non-volatile memory applications.Thermal crosstalk in 3-dimensional RRAM crossbar array.Ultrafast synaptic events in a chalcogenide memristorCoexistence of high performance resistance and capacitance memory based on multilayered metal-oxide structures.Solvothermal synthesis and controlled self-assembly of monodisperse titanium-based perovskite colloidal nanocrystals.Ultrathin Ferroelectric Films: Growth, Characterization, Physics and Applications.High performance bipolar resistive switching memory devices based on Zn2SnO4 nanowires.Multi-Nonvolatile State Resistive Switching Arising from Ferroelectricity and Oxygen Vacancy Migration.Green and scalable production of colloidal perovskite nanocrystals and transparent sols by a controlled self-collection process.Flexible, Semitransparent, and Inorganic Resistive Memory based on BaTi0.95 Co0.05 O3 Film.Bipolar resistive switching with negative differential resistance effect in a Cu/BaTiO3/Ag device.The role of Schottky barrier in the resistive switching of SrTiO3: direct experimental evidence.Resistive Switching in All-Oxide Ferroelectric Tunnel Junctions with Ionic Interfaces.Resistive switching in hafnium dioxide layers: Local phenomenon at grain boundariesHighly uniform bipolar resistive switching characteristics in TiO2/BaTiO3/TiO2 multilayer
P2860

High-performance programmable memory devices based on co-doped BaTiO3.

Item
http://www.wikidata.org/entity/Q51017598
description
2011 nî lūn-bûn
@nan
2011年の論文
@ja
2011年学术文章
@wuu
2011年学术文章
@zh
2011年学术文章
@zh-cn
2011年学术文章
@zh-hans
2011年学术文章
@zh-my
2011年学术文章
@zh-sg
2011年學術文章
@yue
2011年學術文章
@zh-hant
name
High-performance programmable memory devices based on co-doped BaTiO3.
@en
High-performance programmable memory devices based on co-doped BaTiO3.
@nl
type
label
High-performance programmable memory devices based on co-doped BaTiO3.
@en
High-performance programmable memory devices based on co-doped BaTiO3.
@nl
prefLabel
High-performance programmable memory devices based on co-doped BaTiO3.
@en
High-performance programmable memory devices based on co-doped BaTiO3.
@nl
P1433
P1476
P2093
P2860
P304
P31
P356
P407
P433
P478
P577
P5875
P698
P356
P1433
P1476
High-performance programmable memory devices based on co-doped BaTiO3.
@en
P2093
P2860
P304
P31
P356
P407
P433
P478
P577
P5875
P698