Diffusion of adhesion layer metals controls nanoscale memristive switching.
about
Resistance switching mode transformation in SrRuO3/Cr-doped SrZrO3/Pt frameworks via a thermally activated Ti out-diffusion processKey concepts behind forming-free resistive switching incorporated with rectifying transport properties.Deterministic conversion between memory and threshold resistive switching via tuning the strong electron correlation.Engineering interface-type resistive switching in BiFeO3 thin film switches by Ti implantation of bottom electrodes.Sub-10 nm Ta Channel Responsible for Superior Performance of a HfO2 Memristor.Kinetically driven switching and memory phenomena at the interface between a proton-conductive electrolyte and a titanium electrode.Effect of voltage polarity and amplitude on electroforming of TiO2 based memristive devices.The current limit and self-rectification functionalities in the TiO2/HfO2 resistive switching material system.High-performance programmable memory devices based on co-doped BaTiO3.Confining grains of textured Cu2O films to single-crystal nanowires and resultant change in resistive switching characteristics.Current-controlled negative differential resistance due to Joule heating in TiO2
P2860
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P2860
Diffusion of adhesion layer metals controls nanoscale memristive switching.
description
2010 nî lūn-bûn
@nan
2010年の論文
@ja
2010年学术文章
@wuu
2010年学术文章
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2010年学术文章
@zh-cn
2010年学术文章
@zh-hans
2010年学术文章
@zh-my
2010年学术文章
@zh-sg
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2010年學術文章
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name
Diffusion of adhesion layer metals controls nanoscale memristive switching.
@en
Diffusion of adhesion layer metals controls nanoscale memristive switching.
@nl
type
label
Diffusion of adhesion layer metals controls nanoscale memristive switching.
@en
Diffusion of adhesion layer metals controls nanoscale memristive switching.
@nl
prefLabel
Diffusion of adhesion layer metals controls nanoscale memristive switching.
@en
Diffusion of adhesion layer metals controls nanoscale memristive switching.
@nl
P2093
P356
P1433
P1476
Diffusion of adhesion layer metals controls nanoscale memristive switching.
@en
P2093
Douglas A A Ohlberg
Duncan R Stewart
Gilberto Medeiros-Ribeiro
J Joshua Yang
John Paul Strachan
Philip J Kuekes
Qiangfei Xia
R Stanley Williams
Ronald D Kelley
William F Stickle
P304
P356
10.1002/ADMA.201000663
P407
P577
2010-09-01T00:00:00Z