Field-effect transistors based on wafer-scale, highly uniform few-layer p-type WSe2.
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Field-effect transistors based on wafer-scale, highly uniform few-layer p-type WSe2.
description
2016 nî lūn-bûn
@nan
2016年の論文
@ja
2016年学术文章
@wuu
2016年学术文章
@zh
2016年学术文章
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2016年学术文章
@zh-hans
2016年学术文章
@zh-my
2016年学术文章
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2016年學術文章
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2016年學術文章
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Field-effect transistors based on wafer-scale, highly uniform few-layer p-type WSe2.
@en
Field-effect transistors based on wafer-scale, highly uniform few-layer p-type WSe2.
@nl
type
label
Field-effect transistors based on wafer-scale, highly uniform few-layer p-type WSe2.
@en
Field-effect transistors based on wafer-scale, highly uniform few-layer p-type WSe2.
@nl
prefLabel
Field-effect transistors based on wafer-scale, highly uniform few-layer p-type WSe2.
@en
Field-effect transistors based on wafer-scale, highly uniform few-layer p-type WSe2.
@nl
P2093
P2860
P356
P1433
P1476
Field-effect transistors based on wafer-scale, highly uniform few-layer p-type WSe2.
@en
P2093
Alexey Tarasov
Corey A Joiner
Eric M Vogel
Georges Pavlidis
Meng-Yen Tsai
Philip M Campbell
Samuel Graham
W Jud Ready
P2860
P304
P356
10.1039/C5NR06180F
P407
P577
2016-01-08T00:00:00Z