Graphene and boron nitride lateral heterostructures for atomically thin circuitry.
about
Resonant tunnelling and negative differential conductance in graphene transistors.Theoretical predictions on the electronic structure and charge carrier mobility in 2D phosphorus sheets.Theoretical prediction of electronic structure and carrier mobility in single-walled MoS₂ nanotubesSelf-assembly of electronically abrupt borophene/organic lateral heterostructuresEstablishing the pivotal role of local aromaticity in the electronic properties of boron-nitride graphene lateral hybrids.Continuous growth of hexagonal graphene and boron nitride in-plane heterostructures by atmospheric pressure chemical vapor deposition.Exciton emission of quasi-2D InGaN in GaN matrix grown by molecular beam epitaxy.Metal halide perovskite nanomaterials: synthesis and applications.Rebar graphene.High Quality Monolayer Graphene Synthesized by Resistive Heating Cold Wall Chemical Vapor Deposition.Temperature-triggered chemical switching growth of in-plane and vertically stacked graphene-boron nitride heterostructuresHigh-mobility and air-stable single-layer WS2 field-effect transistors sandwiched between chemical vapor deposition-grown hexagonal BN filmsPatterned arrays of lateral heterojunctions within monolayer two-dimensional semiconductors.Postsynthesis of h-BN/Graphene Heterostructures Inside a STEMSwitching Behaviors of Graphene-Boron Nitride Nanotube HeterojunctionsModelling heat conduction in polycrystalline hexagonal boron-nitride films.Schottky barrier at graphene/metal oxide interfaces: insight from first-principles calculations.Atomistic understanding of the lateral growth of graphene from the edge of an h-BN domain: towards a sharp in-plane junction.Synthesis of Extended Atomically Perfect Zigzag Graphene - Boron Nitride InterfacesPhase transition and in situ construction of lateral heterostructure of 2D superconducting α/β Mo2C with sharp interface by electron beam irradiation.Implementation of Outstanding Electronic Transport in Polar Covalent Boron Nitride Atomic Chains: another Extraordinary Odd-Even Behaviour.Modulation of electrical potential and conductivity in an atomic-layer semiconductor heterojunction.Mechanical properties and failure behaviors of the interface of hybrid graphene/hexagonal boron nitride sheetsGate-tunable carbon nanotube-MoS2 heterojunction p-n diode.Hierarchical Cobalt Hydroxide and B/N Co-Doped Graphene Nanohybrids Derived from Metal-Organic Frameworks for High Energy Density Asymmetric SupercapacitorsPlasmonic excitations of 1D metal-dielectric interfaces in 2D systems: 1D surface plasmon polaritons.Oriented graphene nanoribbons embedded in hexagonal boron nitride trenchesIn situ catalytic growth of large-area multilayered graphene/MoS2 heterostructures.Interface engineering for CVD graphene: current status and progress.Spiers Memorial Lecture. Advances of carbon nanomaterials.BN heterosuperbenzenes: synthesis and properties.Band engineering for novel two-dimensional atomic layers.Graphene single crystals: size and morphology engineering.Recent progress in van der Waals heterojunctions.Stability, and optical and electronic properties of ultrathin h-BNC.Functionalized hexagonal boron nitride nanomaterials: emerging properties and applications.B=N Units as Part of Extended π-Conjugated Oligomers and Polymers.Synthesis, structure and applications of graphene-based 2D heterostructures.Graphene Nanoribbon Based Thermoelectrics: Controllable Self- Doping and Long-Range DisorderSynthesis of High-Quality Graphene and Hexagonal Boron Nitride Monolayer In-Plane Heterostructure on Cu-Ni Alloy
P2860
Q24630390-ACC470F8-C3E8-41CE-89CC-55BA122A6FCBQ30409758-EDA5AFEE-4269-4BD2-8F55-86D21250B961Q30441946-B5FB6560-B7FC-4437-8578-B8455E4ED616Q30839601-166BEC25-FF57-42F7-BE14-8115AA6B5726Q33364021-DA031916-AD25-468B-9406-D86AF515CCB7Q33459688-6DA5B8E1-D1D4-4369-8DCB-03AA0AB046FFQ33572323-B405555F-3B10-498B-8A49-2341D09EB44BQ33686398-E4EBD534-5552-4D46-B7EB-FDE764235617Q33715992-6089D923-D3EA-458C-AE30-18CB87BA24A1Q34479706-75FE3F74-EBDF-490F-9939-FB8FBEF8A8AAQ35488394-12BB589D-C134-4D38-B8AB-5EFECE8D1BE4Q35669670-33C43BD9-9C85-4433-BE6B-1C1EC35F6484Q35704413-5B79F89B-C379-4DA1-8FC4-EA039FD162D0Q35855716-11280725-AC23-441D-B474-68E686881CD6Q35866299-259718A1-D05D-44C2-8DD4-969901C4FFE8Q35969573-D9829B4E-043E-4C33-8FA7-A67477DC329EQ36271373-9E6D2F7A-6090-40A8-9E36-5361FF64A28EQ36293357-3DD6B06B-7D7C-4D18-BA49-8AFD28F2BDCBQ36301126-E2C643D5-B4A6-45C7-ACC2-5BF0E8CBFF2EQ36377546-BC1DC810-FC71-497F-9272-2CE5A879C742Q36925577-FB7EB5A6-4498-46A8-82BC-4F81F1E86C09Q37168946-958CA0BD-E277-485B-8128-FD40282BA820Q37177283-FCCC7D14-CC11-4D37-BAD8-17BBEEFBA1DAQ37318173-7E1AA9B5-2151-45B0-9AAE-1784CB94CEDFQ37667901-F2F7B688-3A2F-4AE3-A8B0-51F6405A9A26Q37676979-3A6DF532-8259-4DBF-90A6-C94BA9F382AEQ37695367-040922CA-ED21-4454-A005-9B33334E2B10Q37700333-1B83BCBB-554B-4328-808B-2DDED12EBA24Q38241251-B1F60ED4-E67D-4EA3-89C6-D93BC2952AF7Q38269363-40FD6B3A-EC8C-45A6-959D-E7ED8FBAD29DQ38282178-974C5E3A-BCF4-4BF4-971A-10D9E0BBCFECQ38289160-5AE8B09D-9BD7-4F02-94D8-CA9C62942794Q38391309-86E9FD5A-8BAF-4EEF-A95A-F55555D8F653Q38743041-856A5486-BAA4-464A-8167-6AB05A628A8BQ38760575-A5377CE0-9A20-4C4F-9159-1C07D9415FF4Q38833141-1B798AEE-6151-4225-8266-76B9D590AD98Q38839585-63A01AB5-7010-42BC-BC57-F9D5F14DD369Q39425393-FD97AB94-FB2A-4D63-83E3-A28C8A2BAD01Q41482668-4B38AE7E-9EFB-4ABC-96B8-1261A1781B43Q41711014-09A1A734-0462-46A6-A642-D5ABA0338E59
P2860
Graphene and boron nitride lateral heterostructures for atomically thin circuitry.
description
2012 nî lūn-bûn
@nan
2012年の論文
@ja
2012年学术文章
@wuu
2012年学术文章
@zh-cn
2012年学术文章
@zh-hans
2012年学术文章
@zh-my
2012年学术文章
@zh-sg
2012年學術文章
@yue
2012年學術文章
@zh
2012年學術文章
@zh-hant
name
Graphene and boron nitride lateral heterostructures for atomically thin circuitry.
@en
Graphene and boron nitride lateral heterostructures for atomically thin circuitry.
@nl
type
label
Graphene and boron nitride lateral heterostructures for atomically thin circuitry.
@en
Graphene and boron nitride lateral heterostructures for atomically thin circuitry.
@nl
prefLabel
Graphene and boron nitride lateral heterostructures for atomically thin circuitry.
@en
Graphene and boron nitride lateral heterostructures for atomically thin circuitry.
@nl
P2093
P2860
P356
P1433
P1476
Graphene and boron nitride lateral heterostructures for atomically thin circuitry.
@en
P2093
Jiwoong Park
Lola Brown
Mark P Levendorf
Pinshane Y Huang
Robin W Havener
P2860
P2888
P304
P356
10.1038/NATURE11408
P407
P577
2012-08-01T00:00:00Z
P5875
P6179
1022647944