Influence of encapsulation temperature on Ge:Pδ-doped layers
about
New avenues to an old material: controlled nanoscale doping of germanium.Dephasing rates for weak localization and universal conductance fluctuations in two dimensional Si:P and Ge:P δ-layers.Atomic layer doping of strained Ge-on-insulator thin films with high electron densitiesn-Type Doping of Germanium from Phosphine: Early Stages Resolved at the Atomic Level
P2860
Influence of encapsulation temperature on Ge:Pδ-doped layers
description
im Dezember 2009 veröffentlichter wissenschaftlicher Artikel
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wetenschappelijk artikel
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наукова стаття, опублікована в грудні 2009
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name
Influence of encapsulation temperature on Ge:Pδ-doped layers
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Influence of encapsulation temperature on Ge:Pδ-doped layers
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type
label
Influence of encapsulation temperature on Ge:Pδ-doped layers
@en
Influence of encapsulation temperature on Ge:Pδ-doped layers
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prefLabel
Influence of encapsulation temperature on Ge:Pδ-doped layers
@en
Influence of encapsulation temperature on Ge:Pδ-doped layers
@nl
P2860
P1433
P1476
Influence of encapsulation temperature on Ge:Pδ-doped layers
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P2093
G. Scappucci
M. Y. Simmons
P2860
P356
10.1103/PHYSREVB.80.233202
P407
P577
2009-12-23T00:00:00Z