about
Isolated electron spins in silicon carbide with millisecond coherence times.Quantum decoherence dynamics of divacancy spins in silicon carbide.Room temperature coherent control of defect spin qubits in silicon carbide.Polytype control of spin qubits in silicon carbide.Magnetic field and temperature sensing with atomic-scale spin defects in silicon carbide.Optical charge state control of spin defects in 4H-SiC.Native point defects on hydrogen-passivated 4H-SiC (0001) surface and the effects on metal adsorptions.High-Fidelity Bidirectional Nuclear Qubit Initialization in SiC.Electrically and mechanically tunable electron spins in silicon carbide color centers.Optical Polarization of Nuclear Spins in Silicon Carbide.Quantum computing with defectsExcitation spectrum as a resource for efficient two-qubit entangling gatesSpin and Optical Properties of Silicon Vacancies in Silicon Carbide − A ReviewInteraction between magnetic moments and itinerant carriers in d0 ferromagnetic SiCHarnessing the power of quantum systems based on spin magnetic resonance: from ensembles to single spinsIdentification of Intrinsic Defects in SiC: Towards an Understanding of Defect Aggregates by Combining Theoretical and Experimental ApproachesIdentification of the Carbon Antisite-Vacancy Pair in4H-SiCDiamond and silicon converge
P2860
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P2860
description
article publié dans la revue scientifique Physical Review Letters
@fr
im Februar 2006 veröffentlichter wissenschaftlicher Artikel
@de
scientific article published in Physical Review Letters
@en
wetenschappelijk artikel
@nl
наукова стаття, опублікована в лютому 2006
@uk
name
Divacancy in 4H-SiC
@en
Divacancy in 4H-SiC
@nl
type
label
Divacancy in 4H-SiC
@en
Divacancy in 4H-SiC
@nl
prefLabel
Divacancy in 4H-SiC
@en
Divacancy in 4H-SiC
@nl
P2093
P50
P1476
Divacancy in 4H-SiC
@en
P2093
P304
P356
10.1103/PHYSREVLETT.96.055501
P407
P577
2006-02-06T00:00:00Z