Identification of the Carbon Antisite-Vacancy Pair in4H-SiC
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Optical switching of defect charge states in 4H-SiC.Improving Defect-Based Quantum Emitters in Silicon Carbide via Inorganic Passivation.Solid-state single-photon emittersSpin and photophysics of carbon-antisite vacancy defect in4Hsilicon carbide: A potential quantum bitIdentification of Intrinsic Defects in SiC: Towards an Understanding of Defect Aggregates by Combining Theoretical and Experimental Approaches
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Identification of the Carbon Antisite-Vacancy Pair in4H-SiC
description
article publié dans la revue scientifique Physical Review Letters
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im April 2006 veröffentlichter wissenschaftlicher Artikel
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scientific article published in Physical Review Letters
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wetenschappelijk artikel
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наукова стаття, опублікована у квітні 2006
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name
Identification of the Carbon Antisite-Vacancy Pair in4H-SiC
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Identification of the Carbon Antisite-Vacancy Pair in4H-SiC
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type
label
Identification of the Carbon Antisite-Vacancy Pair in4H-SiC
@en
Identification of the Carbon Antisite-Vacancy Pair in4H-SiC
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prefLabel
Identification of the Carbon Antisite-Vacancy Pair in4H-SiC
@en
Identification of the Carbon Antisite-Vacancy Pair in4H-SiC
@nl
P2093
P50
P1476
Identification of the carbon antisite-vacancy pair in 4H-SiC
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P2093
P2860
P304
P356
10.1103/PHYSREVLETT.96.145501
P407
P577
2006-04-10T00:00:00Z