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Growth condition dependence of unintentional oxygen incorporation in epitaxial GaNKey concepts behind forming-free resistive switching incorporated with rectifying transport properties.Bipolar electric-field enhanced trapping and detrapping of mobile donors in BiFeO3 memristors.High Area Capacity Lithium-Sulfur Full-cell Battery with Prelitiathed Silicon Nanowire-Carbon Anodes for Long Cycling StabilityFerroelectricity and antiferroelectricity of doped thin HfO2-based films.Enabling Energy Efficiency and Polarity Control in Germanium Nanowire Transistors by Individually Gated Nanojunctions.Current Progress in the Chemical Vapor Deposition of Type-Selected Horizontally Aligned Single-Walled Carbon Nanotubes.On the Control of the Fixed Charge Densities in Al2O3-Based Silicon Surface Passivation Schemes.Light Weight and Flexible High-Performance Diagnostic Platform.Forming-free resistive switching in multiferroic BiFeO3 thin films with enhanced nanoscale shunts.Understanding the formation of the metastable ferroelectric phase in hafnia-zirconia solid solution thin films.Surface and grain boundary energy as the key enabler of ferroelectricity in nanoscale hafnia-zirconia: a comparison of model and experiment.Switching Kinetics in Nanoscale Hafnium Oxide Based Ferroelectric Field-Effect Transistors.Lanthanum-Doped Hafnium Oxide: A Robust Ferroelectric Material.Local ion irradiation-induced resistive threshold and memory switching in Nb2O5/NbO(x) films.Direct probing of Schottky barriers in Si nanowire Schottky barrier field effect transistors.Compact Nanowire Sensors Probe Microdroplets.Multiscale modeling of nanowire-based Schottky-barrier field-effect transistors for sensor applications.Stabilizing the ferroelectric phase in doped hafnium oxideExploiting Memristive BiFeO3Bilayer Structures for Compact Sequential LogicsResistive switching in unstructured, polycrystalline BiFeO3thin films with downscaled electrodesLow Temperature Compatible Hafnium Oxide Based FerroelectricsImpact of different dopants on the switching properties of ferroelectric hafniumoxideStrontium doped hafnium oxide thin films: Wide process window for ferroelectric memories(Invited) Hafnium Oxide Based CMOS Compatible Ferroelectric MaterialsHafnium Oxide Based CMOS Compatible Ferroelectric MaterialsSponge-like Si-SiO2 nanocomposite—Morphology studies of spinodally decomposed silicon-rich oxideFerroelectricity in Si-Doped HfO2Revealed: A Binary Lead-Free FerroelectricReconfigurable silicon nanowire transistorsFerroelectricity in Simple Binary ZrO2 and HfO2Scaling and Graphical Transport-Map Analysis of Ambipolar Schottky-Barrier Thin-Film Transistors Based on a Parallel Array of Si NanowiresInvestigation of embedded perovskite nanoparticles for enhanced capacitor permittivitiesElectric field cycling behavior of ferroelectric hafnium oxideComplex Internal Bias Fields in Ferroelectric Hafnium OxideInterpretation of azimuthal angle dependence of periodic gratings in Mueller matrix spectroscopic ellipsometryDynamic leakage current compensation revisitedDually active silicon nanowire transistors and circuits with equal electron and hole transportOn the stabilization of ferroelectric negative capacitance in nanoscale devicesSDVSRM - a new SSRM based technique featuring dynamically adjusted, scanner synchronized sample voltages for measurement of actively operated devicesAccumulative Polarization Reversal in Nanoscale Ferroelectric Transistors
P50
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P50
description
researcher
@en
wetenschapper
@nl
հետազոտող
@hy
name
Thomas Mikolajick
@ast
Thomas Mikolajick
@en
Thomas Mikolajick
@es
Thomas Mikolajick
@nl
type
label
Thomas Mikolajick
@ast
Thomas Mikolajick
@en
Thomas Mikolajick
@es
Thomas Mikolajick
@nl
prefLabel
Thomas Mikolajick
@ast
Thomas Mikolajick
@en
Thomas Mikolajick
@es
Thomas Mikolajick
@nl
P1053
F-8427-2011
P106
P108
P1153
6604007269
P1960
oO0M3q4AAAAJ
P2456
P2798
P31
P496
0000-0003-3814-0378