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Q38988062-4677D457-CC46-486C-B52E-D38D9D561E6C
Q38988062-4677D457-CC46-486C-B52E-D38D9D561E6C
BestRank
Statement
http://www.wikidata.org/entity/statement/Q38988062-4677D457-CC46-486C-B52E-D38D9D561E6C
The Integration of Sub-10 nm Gate Oxide on MoS2 with Ultra Low Leakage and Enhanced Mobility.
P2860
Q38988062-4677D457-CC46-486C-B52E-D38D9D561E6C
BestRank
Statement
http://www.wikidata.org/entity/statement/Q38988062-4677D457-CC46-486C-B52E-D38D9D561E6C
rank
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type
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wasDerivedFrom
e1b245082b3ac6b15e58b83906362dcaa2e1ac40
P2860
MoS2 nanosheets for top-gate nonvolatile memory transistor channel.