MoS2 nanosheets for top-gate nonvolatile memory transistor channel.
about
Scalable fabrication of a hybrid field-effect and acousto-electric device by direct growth of monolayer MoS2/LiNbO3Hybrid Flexible Resistive Random Access Memory-Gated Transistor for Novel Nonvolatile Data Storage.A photofunctional bottom-up bis(dipyrrinato)zinc(II) complex nanosheetA two-dimensional π-d conjugated coordination polymer with extremely high electrical conductivity and ambipolar transport behaviour.Thickness Considerations of Two-Dimensional Layered Semiconductors for Transistor ApplicationsSide-Gated In2O3 Nanowire Ferroelectric FETs for High-Performance Nonvolatile Memory ApplicationsGraphene-based hybrid structures combined with functional materials of ferroelectrics and semiconductors.Eliminating Overerase Behavior by Designing Energy Band in High-Speed Charge-Trap Memory Based on WSe2.Flexible Nonvolatile Transistor Memory with Solution-Processed Transition Metal Dichalcogenides.The Integration of Sub-10 nm Gate Oxide on MoS2 with Ultra Low Leakage and Enhanced Mobility.Surface Plasmon-Enhanced Photodetection in Few Layer MoS2 Phototransistors with Au Nanostructure Arrays.Two-dimensional molybdenum disulphide nanosheet-covered metal nanoparticle array as a floating gate in multi-functional flash memories.Emerging Applications of Liquid Crystals Based on Nanotechnology.An Al₂O₃ Gating Substrate for the Greater Performance of Field Effect Transistors Based on Two-Dimensional Materials.Nanosheet thickness-modulated MoS2 dielectric property evidenced by field-effect transistor performance.Ferroelectrically Gated Atomically Thin Transition-Metal Dichalcogenides as Nonvolatile Memory.A high performance triboelectric nanogenerator for self-powered non-volatile ferroelectric transistor memory.Floating gate memory-based monolayer MoS2 transistor with metal nanocrystals embedded in the gate dielectrics.Role of Charge Traps in the Performance of Atomically Thin Transistors.Trap density probing on top-gate MoS₂ nanosheet field-effect transistors by photo-excited charge collection spectroscopy.Interface engineering for high-performance top-gated MoS2 field-effect transistors.H-terminated diamond field effect transistor with ferroelectric gate insulator
P2860
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P2860
MoS2 nanosheets for top-gate nonvolatile memory transistor channel.
description
2012 nî lūn-bûn
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2012年の論文
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2012年学术文章
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2012年学术文章
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2012年学术文章
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2012年学术文章
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2012年学术文章
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name
MoS2 nanosheets for top-gate nonvolatile memory transistor channel.
@en
MoS2 nanosheets for top-gate nonvolatile memory transistor channel.
@nl
type
label
MoS2 nanosheets for top-gate nonvolatile memory transistor channel.
@en
MoS2 nanosheets for top-gate nonvolatile memory transistor channel.
@nl
prefLabel
MoS2 nanosheets for top-gate nonvolatile memory transistor channel.
@en
MoS2 nanosheets for top-gate nonvolatile memory transistor channel.
@nl
P2093
P2860
P356
P1433
P1476
MoS2 nanosheets for top-gate nonvolatile memory transistor channel.
@en
P2093
Hee Sung Lee
Jae Hoon Kim
Min Kyu Park
Pyo Jin Jeon
Seongil Im
Sung-Wook Min
Sunmin Ryu
Young Tack Lee
P2860
P304
P356
10.1002/SMLL.201200752
P577
2012-07-31T00:00:00Z