Effective mobility enhancement by using nanometer dot doping in amorphous IGZO thin-film transistors.
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Remarkably high mobility ultra-thin-film metal-oxide transistor with strongly overlapped orbitalsElectronic Structure of Low-Temperature Solution-Processed Amorphous Metal Oxide Semiconductors for Thin-Film Transistor Applications.Multifunctional Organic-Semiconductor Interfacial Layers for Solution-Processed Oxide-Semiconductor Thin-Film Transistor.Transparent indium-tin oxide/indium-gallium-zinc oxide Schottky diodes formed by gradient oxygen dopingInvestigation of the High Mobility IGZO Thin Films by Using Co-Sputtering Method.
P2860
Effective mobility enhancement by using nanometer dot doping in amorphous IGZO thin-film transistors.
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2011 nî lūn-bûn
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2011年の論文
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2011年学术文章
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name
Effective mobility enhancement ...... us IGZO thin-film transistors.
@en
Effective mobility enhancement ...... us IGZO thin-film transistors.
@nl
type
label
Effective mobility enhancement ...... us IGZO thin-film transistors.
@en
Effective mobility enhancement ...... us IGZO thin-film transistors.
@nl
prefLabel
Effective mobility enhancement ...... us IGZO thin-film transistors.
@en
Effective mobility enhancement ...... us IGZO thin-film transistors.
@nl
P2093
P2860
P356
P1433
P1476
Effective mobility enhancement ...... us IGZO thin-film transistors.
@en
P2093
Chia-Hsin Chen
Chuang-Chuang Tsai
Hsiao-Wen Zan
Wu-Wei Tsai
P2860
P304
P356
10.1002/ADMA.201102530
P407
P577
2011-08-11T00:00:00Z