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2
Q53767037-45551D0E-4943-4E79-BE10-9391B5DFAD58
Q53767037-45551D0E-4943-4E79-BE10-9391B5DFAD58
BestRank
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http://www.wikidata.org/entity/statement/Q53767037-45551D0E-4943-4E79-BE10-9391B5DFAD58
Effective mobility enhancement by using nanometer dot doping in amorphous IGZO thin-film transistors.
P2860
Q53767037-45551D0E-4943-4E79-BE10-9391B5DFAD58
BestRank
Statement
http://www.wikidata.org/entity/statement/Q53767037-45551D0E-4943-4E79-BE10-9391B5DFAD58
rank
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type
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wasDerivedFrom
6a237e497317060bd856d158da0197068c1f6f46
P2860
Role of gallium doping in dramatically lowering amorphous-oxide processing temperatures for solution-derived indium zinc oxide thin-film transistors.