Resistive switching memory characteristics of Ge/GeOx nanowires and evidence of oxygen ion migration.
about
TaOx-based resistive switching memories: prospective and challenges.Impact of electrically formed interfacial layer and improved memory characteristics of IrOx/high-κx/W structures containing AlOx, GdOx, HfOx, and TaOx switching materials.Enhanced resistive switching phenomena using low-positive-voltage format and self-compliance IrOx/GdOx/W cross-point memories.Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface.Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaO x interface.Resistive Switching of Sub-10 nm TiO₂ Nanoparticle Self-Assembled Monolayers.
P2860
Resistive switching memory characteristics of Ge/GeOx nanowires and evidence of oxygen ion migration.
description
2013 nî lūn-bûn
@nan
2013年の論文
@ja
2013年論文
@yue
2013年論文
@zh-hant
2013年論文
@zh-hk
2013年論文
@zh-mo
2013年論文
@zh-tw
2013年论文
@wuu
2013年论文
@zh
2013年论文
@zh-cn
name
Resistive switching memory cha ...... dence of oxygen ion migration.
@en
type
label
Resistive switching memory cha ...... dence of oxygen ion migration.
@en
prefLabel
Resistive switching memory cha ...... dence of oxygen ion migration.
@en
P2093
P2860
P356
P1476
Resistive switching memory cha ...... idence of oxygen ion migration
@en
P2093
Amit Prakash
Samit K Ray
Sandip Majumdar
Santanu Manna
P2860
P2888
P356
10.1186/1556-276X-8-220
P577
2013-05-08T00:00:00Z
P6179
1002751356