about
Organic core-sheath nanowire artificial synapses with femtojoule energy consumption.Plasticity in memristive devices for spiking neural networksNeuromorphic device architectures with global connectivity through electrolyte gating.Multi-floor cascading ferroelectric nanostructures: multiple data writing-based multi-level non-volatile memory devices.Activity-dependent synaptic plasticity of a chalcogenide electronic synapse for neuromorphic systems.Adaptive microwave impedance memory effect in a ferromagnetic insulator.Investigation of multilevel data storage in silicon-based polycrystalline ferroelectric tunnel junction.Coexistence of memory resistance and memory capacitance in TiO2 solid-state devices.Localized states in advanced dielectrics from the vantage of spin- and symmetry-polarized tunnelling across MgO.An epitaxial ferroelectric tunnel junction on silicon.Giant Electroresistive Ferroelectric Diode on 2DEGFunctional ferroelectric tunnel junctions on silicon.Low-field Switching Four-state Nonvolatile Memory Based on Multiferroic Tunnel Junctions.Encoding, training and retrieval in ferroelectric tunnel junctions.Non-Volatile Ferroelectric Switching of Ferromagnetic Resonance in NiFe/PLZT Multiferroic Thin Film HeterostructuresLong-Term Homeostatic Properties Complementary to Hebbian Rules in CuPc-Based Multifunctional Memristor.Spintronic Nanodevices for Bioinspired Computing.Persistence of strong and switchable ferroelectricity despite vacancies.Learning through ferroelectric domain dynamics in solid-state synapses.STDP and STDP variations with memristors for spiking neuromorphic learning systems.Nanoscale resistive switching devices: mechanisms and modeling.Spatially resolved TiOx phases in switched RRAM devices using soft X-ray spectromicroscopy.Optically controlled electroresistance and electrically controlled photovoltage in ferroelectric tunnel junctions.Solid-state electrochemistry on the nanometer and atomic scales: the scanning probe microscopy approach.Tunnel junction based memristors as artificial synapses.Three-dimensional imaging of vortex structure in a ferroelectric nanoparticle driven by an electric fieldOn-chip photonic synapse.Memristive phase switching in two-dimensional 1T-TaS2 crystals.Memcomputing NP-complete problems in polynomial time using polynomial resources and collective states.Ferroelectric tunnel junctions: Beyond the barrier.Large resistive switching in ferroelectric BiFeO₃ nano-island based switchable diodes.Probing a Device's Active Atoms.Topological phase transformations and intrinsic size effects in ferroelectric nanoparticles.Ultralow power artificial synapses using nanotextured magnetic Josephson junctions.Interfacial memristors in Al-LaNiO3 heterostructures.Resonant electron tunnelling assisted by charged domain walls in multiferroic tunnel junctions.Resistance Switching and Memristive Hysteresis in Visible-Light-Activated Adsorbed ZnO Thin Films.Initialization-Free Multilevel States Driven by Spin-Orbit Torque Switching.Organometal Halide Perovskite Artificial Synapses.Light-controlled resistive switching memory of multiferroic BiMnO3 nanowire arrays.
P2860
Q27334901-996606B2-8A0E-4217-96A7-511A0E2F8E4DQ28085560-954D0A9B-DF41-43FA-9B58-91B1655C22CCQ30354912-27245F48-8689-4CF0-A755-47234973BFF0Q31033524-8143EA5D-78F9-4E3E-8437-966C57EB3A2FQ33585452-0439D181-B36E-45E7-818E-FB8F65487BC5Q33815706-A81B0A03-69CE-413E-848F-1C541B9EC0F0Q33866801-B6E306ED-78EA-4A87-B935-CF07E08050C6Q34303633-7905881E-5D00-4B7F-B218-8B3E5DB40C2AQ34432127-AED8228D-504C-4614-8547-8D02386447B0Q35243247-B2C22257-943D-4B33-A3C3-C6A211841560Q35650982-3FDC15B4-513B-4126-BEE8-1ECC7FB0C52BQ35717111-97744F7B-579B-42E1-8708-8BCE6E3C479DQ35913227-41600054-EF30-4A47-A734-5A3E6776F6CAQ36950496-E5CE0C38-4D2B-4B6B-AF10-50BAF2DE6E05Q37223828-FC5DA97B-DE1D-462B-8914-1721BCE677FDQ37352790-245FD87A-F7E3-4D42-9A0F-27A88E506219Q37426244-08F57C17-2444-48DA-8843-3B1A89C10F13Q37605153-8BC2ABFB-7CB1-48F4-A50A-73AF7591864AQ37739194-D5E14537-8CCA-449C-B24E-55010B52B0F0Q38083015-1F9DD63E-9193-4512-BF48-CCA4A48D2EB8Q38140651-109CB8CA-266C-400D-A88A-5FBD11394989Q38556677-045FAE28-F7F1-447B-9F1A-CBA2CDAFD89DQ38707842-BFA09CE0-C5C7-440A-BEAF-468A207235B2Q38826042-5FA7DA37-C1D8-4710-8807-697BEB09D005Q41336399-5D9FEDC4-54C7-47E0-B3FA-2ACD94A16CC5Q41447769-56025D20-7C87-4365-A0E2-C5F330523D04Q41678396-3F3D3B6C-241D-401C-A279-0C9A41551927Q42274139-8B0899F2-3615-4B26-9291-35F693E5295FQ42622957-2A25D4EF-AC3A-472D-985D-EA52B365A752Q43807994-D5B0B9A6-D4C2-4F86-BC9F-3ED76A0B238BQ45786976-7D171717-9F4E-4DA9-950E-754B38F8EE12Q46403895-2D468048-854B-411B-AEC4-E82C2E7FA454Q47244399-8F382DAC-3368-4791-9FEF-070CBB8577EAQ47827259-BF120EBF-877D-4A3D-85D9-CB1572912426Q47998300-8CDC1568-9E62-4BF9-B8B2-3E1441C2853EQ48041846-C31FF758-66EF-4801-BC5E-2128C4BA9F4DQ49389555-2519E1D5-764D-4DA1-8525-A758AF235ADDQ50600840-87665779-7A27-4FB0-AAE2-C37786BD3C16Q50650555-0F85146A-3917-4A9D-9E1F-6E0B9584BE98Q50751627-D25E4C74-5B23-43B4-A12B-32BDD2F045BA
P2860
description
2012 nî lūn-bûn
@nan
2012年の論文
@ja
2012年論文
@yue
2012年論文
@zh-hant
2012年論文
@zh-hk
2012年論文
@zh-mo
2012年論文
@zh-tw
2012年论文
@wuu
2012年论文
@zh
2012年论文
@zh-cn
name
A ferroelectric memristor.
@en
A ferroelectric memristor.
@nl
type
label
A ferroelectric memristor.
@en
A ferroelectric memristor.
@nl
prefLabel
A ferroelectric memristor.
@en
A ferroelectric memristor.
@nl
P2093
P2860
P356
P1433
P1476
A ferroelectric memristor.
@en
P2093
Agnès Barthélémy
André Chanthbouala
Cyrile Deranlot
Hiroyuki Yamada
Julie Grollier
Karim Bouzehouane
Manuel Bibes
Neil D Mathur
Ryan O Cherifi
Stéphane Fusil
P2860
P2888
P304
P356
10.1038/NMAT3415
P407
P577
2012-09-16T00:00:00Z
P5875
P6179
1039892598