Solid-state memories based on ferroelectric tunnel junctions. - Wikidata - awgldk - TriplyDB

Solid-state memories based on ferroelectric tunnel junctions.

Solid-state memories based on ferroelectric tunnel junctions.

http://www.wikidata.org/entity/Q43500286

about

Plasticity in memristive devices for spiking neural networks Non-volatile memory based on the ferroelectric photovoltaic effect Investigation of multilevel data storage in silicon-based polycrystalline ferroelectric tunnel junction.Strain-controlled magnetic domain wall propagation in hybrid piezoelectric/ferromagnetic structures.Selective electrochemical decomposition of outgrowths and nanopatterning in La 0.7 Sr 0.3 MnO3 perovskite thin films.An epitaxial ferroelectric tunnel junction on silicon.Giant Electroresistive Ferroelectric Diode on 2DEG Functional ferroelectric tunnel junctions on silicon.Low-field Switching Four-state Nonvolatile Memory Based on Multiferroic Tunnel Junctions.Space-charge Effect on Electroresistance in Metal-Ferroelectric-Metal capacitors.Magnetization states of all-oxide spin valves controlled by charge-orbital ordering of coupled ferromagnets Unravelling and controlling hidden imprint fields in ferroelectric capacitors.Tunnel electroresistance through organic ferroelectrics.Encoding, training and retrieval in ferroelectric tunnel junctions.Giant Electroresistance in Edge Metal-Insulator-Metal Tunnel Junctions Induced by Ferroelectric Fringe Fields.Room-temperature ferroelectricity in CuInP2S6 ultrathin flakes Non-Volatile Ferroelectric Switching of Ferromagnetic Resonance in NiFe/PLZT Multiferroic Thin Film Heterostructures Polarization curling and flux closures in multiferroic tunnel junctions.Nanoscale resistive switching devices: mechanisms and modeling.Phase control of a perovskite transition-metal oxide through oxygen displacement at the heterointerface.Optically controlled electroresistance and electrically controlled photovoltage in ferroelectric tunnel junctions.A magnetic synapse: multilevel spin-torque memristor with perpendicular anisotropy.A ferroelectric memristor.Optical Imaging of Nonuniform Ferroelectricity and Strain at the Diffraction Limit.Giant tunnelling electroresistance in metal/ferroelectric/semiconductor tunnel junctions by engineering the Schottky barrier.Ultrathin Ferroelectric Films: Growth, Characterization, Physics and Applications.Ferroelectric tunnel junctions: Beyond the barrier.Large resistive switching in ferroelectric BiFeO₃ nano-island based switchable diodes.Nanoscale Bubble Domains and Topological Transitions in Ultrathin Ferroelectric Films.Giant Polarization Sustainability in Ultrathin Ferroelectric Films Stabilized by Charge Transfer.Enhanced tunnelling electroresistance effect due to a ferroelectrically induced phase transition at a magnetic complex oxide interface.Probing electrochemically induced resistive switching of TiO2 using SPM techniques.Direct Probing of Polarization Charge at Nanoscale Level.Electronic-Reconstruction-Enhanced Tunneling Conductance at Terrace Edges of Ultrathin Oxide Films.Multi-Nonvolatile State Resistive Switching Arising from Ferroelectricity and Oxygen Vacancy Migration.Giant electrode effect on tunnelling electroresistance in ferroelectric tunnel junctions.Ferroelectric tunnel junctions for information storage and processing.Enhanced Tunneling Electroresistance in Ferroelectric Tunnel Junctions due to the Reversible Metallization of the Barrier.Large room-temperature electroresistance in dual-modulated ferroelectric tunnel barriers.Ferroelectric Field Effect Induced Asymmetric Resistive Switching Effect in BaTiO3/Nb:SrTiO3 Epitaxial Heterojunctions.

P2860

Q28085560-9230A416-25E6-4062-8853-CEFB5DEA7998 Q30452261-D2068E63-BF04-4DDD-9128-E342CB4118A5 Q33866801-1E343B81-782B-4DFA-BB62-FCDB9D516BB3 Q34557605-351F9487-5509-4F16-A11A-4E28FEEE0BD7 Q34665027-1B6A53CA-14E5-482E-80CE-ECD996AD1859 Q35243247-E2DFAB79-5B3D-4256-BB24-C2FD4ED7289E Q35650982-B09D01E8-DE09-4725-8F84-0D63C8983E2D Q35717111-12BEC5B1-A7C3-4C60-B35A-49CACE6726D7 Q35913227-E01BA60D-ACD5-4BD0-AC25-8AAD4B6B258C Q36376271-D40AF737-2512-4613-834B-07BF2435123D Q36837974-1E9CAFC6-B093-4455-84A0-CFB6E5CDEAD7 Q36845883-D21BC007-196B-494E-94CE-8E3D59E23CAB Q36871995-14219FFF-54F7-4B5A-96FE-1657BBAAC0E7 Q36950496-1E65A822-5C7D-4A59-AA8D-1A143CF28A0E Q37141197-2785AE45-8F08-4FCF-8BBA-2F9C91419503 Q37181250-D34BC3FE-6DC2-4459-83E4-7050A15B649C Q37223828-B41562A8-B41E-440A-8A18-AF439915CF5B Q37423788-DD57D542-E8E9-45AB-A056-BE4CDBF4D0D4 Q38140651-043DD862-DC29-49EE-AFB1-14C37E6AA08D Q38408994-575F7EC9-FB22-4DE2-BC47-1CEFABD24928 Q38707842-991E3DC6-AE2D-48C2-B12E-481D285C14D5 Q38830034-7A16FAB4-8FBC-4612-964B-DAB5B941743B Q39551881-40D0D21A-A306-4ED6-84EA-21FB3046BEB4 Q40369299-F9F08554-0610-4B26-AAA9-EF477751B26C Q42108275-975CAB65-D4BB-40D8-BC16-A63E52E14F33 Q42227036-9522745C-C20A-46FA-833B-4CF629503B99 Q43807994-467EB402-414F-46B0-A9D2-2325E4F7ECA0 Q45786976-6B21360D-FB69-49EA-9D49-185C1A767D47 Q46009110-D0B8477D-C911-4620-BC5F-104E227E06F5 Q46230343-60B78403-0BE9-47AE-9F69-7DC068AFBFE8 Q46736019-D0BD8BBC-F297-483A-8802-7C4FCE561CF2 Q47331740-14BC9FA5-F1AE-427B-BD5B-71D62783D784 Q47351479-69047870-1DA9-441F-A46D-B5B6F437AF6F Q47575843-8D6A87A2-7581-4658-81B1-E1F45BEE3E43 Q47873137-1444479E-5F83-4C40-BB63-AA120A15D8D8 Q50770654-A9D86979-0DAE-474A-86BE-7C7E9E4E7D1A Q50790925-87610DC9-79F5-484B-AB77-323A0416A533 Q51315112-A79E0EBE-809E-49DC-B31E-2D61F1A7CE68 Q53167921-F85B1BB7-56A2-4E92-AD1E-5CAD79703820 Q53279824-8AEFF205-854B-4083-8646-E9B6A6042F5D

P2860

Solid-state memories based on ferroelectric tunnel junctions.

http://www.wikidata.org/entity/Q43500286

description

2011 nî lūn-bûn

@nan

2011年の論文

@ja

2011年学术文章

@wuu

2011年学术文章

@zh

2011年学术文章

@zh-cn

2011年学术文章

@zh-hans

2011年学术文章

@zh-my

2011年学术文章

@zh-sg

2011年學術文章

@yue

2011年學術文章

@zh-hant

name

Solid-state memories based on ferroelectric tunnel junctions.

@en

Solid-state memories based on ferroelectric tunnel junctions.

@nl

type

label

Solid-state memories based on ferroelectric tunnel junctions.

@en

Solid-state memories based on ferroelectric tunnel junctions.

@nl

prefLabel

Solid-state memories based on ferroelectric tunnel junctions.

@en

Solid-state memories based on ferroelectric tunnel junctions.

@nl

P1433

Q43500286-279D533F-F4C6-4D9B-B0C7-D2F76ABC7A25

P1476

Q43500286-2E0D58D0-CEA4-47FD-BB44-A7D13B43D8A0

P2093

Q43500286-116FB90E-A2EC-47A8-80C6-7F7698FC3BC7

Q43500286-1B785235-956B-4066-A388-D76A64E77AB3

Q43500286-2D4F9777-E2B4-42E2-89A0-94CA49236E33

Q43500286-4DA7BFE4-27A0-4D46-AA5E-D5579A7E1121

Q43500286-5DC257B9-F383-4AE2-A094-CBE8545DD50E

Q43500286-70A1D164-FA5F-44D2-9FE2-EF17A7EE31AE

Q43500286-7193C2BF-0952-4578-8A4C-3D0F6043FC55

Q43500286-86B9F756-6417-4BC3-B7A8-BD11C4ECA3E1

Q43500286-AA6F84F8-E4C9-4A0A-9895-9575F694C061

Q43500286-BAC17D49-BA6E-4B51-ADC1-AB57114508FA

P2860

Q43500286-09677FA7-4593-4FB3-939F-99BF4936A204

Q43500286-14B57267-E274-4E0A-BE75-244B57B200EE

Q43500286-2BB18B6C-4389-4D51-A09F-BF0598DBE020

Q43500286-41750323-F384-41F1-8B36-AB8A50E51831

Q43500286-55CBAEBC-1705-4FAA-9B8D-CEB1DD5C8B69

Q43500286-60B9EC41-2297-4DA7-9452-D62E16283137

Q43500286-894E231C-60ED-4E24-93CD-282979433095

Q43500286-A549AF6D-310F-4A2A-97B0-3D50C1FFD7D4

Q43500286-AB1CCBD0-56F8-4E55-B951-FA5762EC9356

Q43500286-BB8158E1-9416-4050-8382-46084E472AE4

P2888

Q43500286-2D64DE9F-B8FA-4934-BA6E-C38A99BE5343

P304

Q43500286-3351A2F6-5645-49A2-9102-487F41626CEA

P31

Q43500286-77C7C45D-0025-40E6-8530-18C64911CD44

P356

Q43500286-D4D1069B-5A7B-4878-B493-4EDC511791DF

P407

Q43500286-3AA4D223-DC56-422D-BE89-1877D95B1032

P433

Q43500286-D3B9AF11-EFC0-473C-9E9A-4010432146BE

P478

Q43500286-74839D5F-3798-41B4-B02A-FCA280CFB2BA

P50

Q43500286-1BB801EA-8492-4FA4-AB78-532BA438F094

Q43500286-2F2E80AD-25D2-4C09-91E7-3B29B61429CB

Q43500286-CA662506-A6C0-46CD-8E96-DADBB9F7ECB1

P577

Q43500286-8E4D6462-8C4D-4DA7-9183-0EA67F30ECB0

P698

Q43500286-16ECAE25-DC6D-47AA-A4FC-B2A5A18FBDB3

P356

P1433

Nature Nanotechnology

P1476

Solid-state memories based on ferroelectric tunnel junctions.

@en

P2093

Agnès Barthélémy

http://www.w3.org/2001/XMLSchema#string

Amir Moshar

http://www.w3.org/2001/XMLSchema#string

André Chanthbouala

http://www.w3.org/2001/XMLSchema#string

Arnaud Crassous

http://www.w3.org/2001/XMLSchema#string

Cyrile Deranlot

http://www.w3.org/2001/XMLSchema#string

Julie Allibe

http://www.w3.org/2001/XMLSchema#string

Julie Grollier

http://www.w3.org/2001/XMLSchema#string

Karim Bouzehouane

http://www.w3.org/2001/XMLSchema#string

Neil D Mathur

http://www.w3.org/2001/XMLSchema#string

Roger Proksch

http://www.w3.org/2001/XMLSchema#string

P2860

Large Magnetoresistance at Room Temperature in Ferromagnetic Thin Film Tunnel Junctions

Physics of thin-film ferroelectric oxides

Giant Electroresistance in Ferroelectric Tunnel Junctions

Giant tunnel electroresistance for non-destructive readout of ferroelectric states

Nanoionics-based resistive switching memories

Polarization control of electron tunneling into ferroelectric surfaces.

Memristive switching mechanism for metal/oxide/metal nanodevices.

Enhancement of ferroelectricity at metal-oxide interfaces.

Enhancement of ferroelectricity in strained BaTiO3 thin films.

Tunneling electroresistance effect in ferroelectric tunnel junctions at the nanoscale.

P2888

P304

101-104

http://www.w3.org/2001/XMLSchema#string

P31

scholarly article

P356

10.1038/NNANO.2011.213

http://www.w3.org/2001/XMLSchema#string

P407

P433

2

http://www.w3.org/2001/XMLSchema#string

P478

7

http://www.w3.org/2001/XMLSchema#string

P50

P577

2011-12-04T00:00:00Z

http://www.w3.org/2001/XMLSchema#dateTime

P698

22138863

http://www.w3.org/2001/XMLSchema#string