about
Atomic electric fields revealed by a quantum mechanical approach to electron picodiffraction.Low-field Switching Four-state Nonvolatile Memory Based on Multiferroic Tunnel Junctions.Domain control of carrier density at a semiconductor-ferroelectric interface.Encoding, training and retrieval in ferroelectric tunnel junctions.Perovskite ferroelectric nanomaterials.Optically controlled electroresistance and electrically controlled photovoltage in ferroelectric tunnel junctions.Multiple polarization states in symmetric ferroelectric heterostructures for multi-bit non-volatile memories.Ferroelectric tunnel junctions for information storage and processing.Leakage current transport mechanisms of La0.67Sr0.33MnO3/BaTiO3 bilayer films grown on Nb:SrTiO3
P2860
Q34767128-E845AEC0-31FE-4B09-9BF8-C022605F367CQ35913227-7F6B2DB7-275B-476B-BCE4-6E04EA1409B6Q36174624-5280F463-2D5E-4CBA-90E2-56BB1A40861DQ36950496-5BF914DF-B86F-49EB-B483-9DF6D381F1ADQ38126408-289B002F-81D4-4C0A-AC9F-7C018B2E9DDDQ38707842-F5FF05B5-E8F4-4C89-8917-681115F0A7D5Q49498871-9731EA86-ADC0-4627-B2D7-920B77CF738CQ50790925-1DFB2B61-A363-4DC6-842D-D12683F8AD9AQ57957618-E23185C9-A442-4E33-9028-568975B7E39C
P2860
description
2013 nî lūn-bûn
@nan
2013年の論文
@ja
2013年学术文章
@wuu
2013年学术文章
@zh
2013年学术文章
@zh-cn
2013年学术文章
@zh-hans
2013年学术文章
@zh-my
2013年学术文章
@zh-sg
2013年學術文章
@yue
2013年學術文章
@zh-hant
name
Ferroelectric tunnel junctions: Beyond the barrier.
@en
Ferroelectric tunnel junctions: Beyond the barrier.
@nl
type
label
Ferroelectric tunnel junctions: Beyond the barrier.
@en
Ferroelectric tunnel junctions: Beyond the barrier.
@nl
prefLabel
Ferroelectric tunnel junctions: Beyond the barrier.
@en
Ferroelectric tunnel junctions: Beyond the barrier.
@nl
P2860
P356
P1433
P1476
Ferroelectric tunnel junctions: Beyond the barrier.
@en
P2093
A Gruverman
E Y Tsymbal
P2860
P2888
P304
P356
10.1038/NMAT3669
P407
P577
2013-05-19T00:00:00Z
P6179
1025845831