Enhanced tunnelling electroresistance effect due to a ferroelectrically induced phase transition at a magnetic complex oxide interface.
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Investigation of multilevel data storage in silicon-based polycrystalline ferroelectric tunnel junction.An epitaxial ferroelectric tunnel junction on silicon.Functional ferroelectric tunnel junctions on silicon.Low-field Switching Four-state Nonvolatile Memory Based on Multiferroic Tunnel Junctions.Ferroelectric-Driven Performance Enhancement of Graphene Field-Effect Transistors Based on Vertical Tunneling Heterostructures.Ferroelectricity driven magnetism at domain walls in LaAlO3/PbTiO3 superlatticesSurface passivation of semiconducting oxides by self-assembled nanoparticles.Effects of strain relaxation in Pr0.67Sr0.33MnO3 films probed by polarization dependent X-ray absorption near edge structure.Magnetization states of all-oxide spin valves controlled by charge-orbital ordering of coupled ferromagnetsA multilevel nonvolatile magnetoelectric memory.Polarization curling and flux closures in multiferroic tunnel junctions.Spin-polarized current injection induced magnetic reconstruction at oxide interface.Electric control of magnetism at the Fe/BaTiO₃ interface.Control of magnetism by electric fields.Phase control of a perovskite transition-metal oxide through oxygen displacement at the heterointerface.Optically controlled electroresistance and electrically controlled photovoltage in ferroelectric tunnel junctions.Giant tunnelling electroresistance in metal/ferroelectric/semiconductor tunnel junctions by engineering the Schottky barrier.Ultrathin Ferroelectric Films: Growth, Characterization, Physics and Applications.Giant Polarization Sustainability in Ultrathin Ferroelectric Films Stabilized by Charge Transfer.Polarization screening-induced magnetic phase gradients at complex oxide interfaces.Ultrahigh vacuum and low-temperature cleaning of oxide surfaces using a low-concentration ozone beam.Interfacial defects induced electronic property transformation at perovskite SrVO3/SrTiO3 and LaCrO3/SrTiO3 heterointerfaces.Multi-Nonvolatile State Resistive Switching Arising from Ferroelectricity and Oxygen Vacancy Migration.Resonant electron tunnelling assisted by charged domain walls in multiferroic tunnel junctions.Polarity-tunable spin transport in all-oxide multiferroic tunnel junctions.Multiferroic Heterostructures Integrating Ferroelectric and Magnetic Materials.Electric field mediated non-volatile tuning magnetism at the single-crystalline Fe/Pb(Mg1/3Nb2/3)0.7Ti0.3O3 interface.Giant electrode effect on tunnelling electroresistance in ferroelectric tunnel junctions.Ferroelectric tunnel junctions for information storage and processing.In Situ Nanoscale Electric Field Control of Magnetism by Nanoionics.Giant Enhancement of Magnetic Anisotropy in Ultrathin Manganite Films via Nanoscale 1D Periodic Depth Modulation.Diverse interface effects on ferroelectricity and magnetoelectric coupling in asymmetric multiferroic tunnel junctions: the role of the interfacial bonding structure.Magnetoelectric Coupling Induced by Interfacial Orbital Reconstruction.Large room-temperature electroresistance in dual-modulated ferroelectric tunnel barriers.Ferroelectric tunnel junctions with graphene electrodes.Ferroelectric-field-effect-enhanced electroresistance in metal/ferroelectric/semiconductor tunnel junctions.Resistive Switching in All-Oxide Ferroelectric Tunnel Junctions with Ionic Interfaces.Room-temperature ferroelectricity in hexagonal TbMnO3 thin films.Multiferroic materials and magnetoelectric physics: symmetry, entanglement, excitation, and topologyValleytronics in merging Dirac cones: All-electric-controlled valley filter, valve, and universal reversible logic gate
P2860
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P2860
Enhanced tunnelling electroresistance effect due to a ferroelectrically induced phase transition at a magnetic complex oxide interface.
description
2013 nî lūn-bûn
@nan
2013年の論文
@ja
2013年学术文章
@wuu
2013年学术文章
@zh-cn
2013年学术文章
@zh-hans
2013年学术文章
@zh-my
2013年学术文章
@zh-sg
2013年學術文章
@yue
2013年學術文章
@zh
2013年學術文章
@zh-hant
name
Enhanced tunnelling electrores ...... netic complex oxide interface.
@en
Enhanced tunnelling electrores ...... netic complex oxide interface.
@nl
type
label
Enhanced tunnelling electrores ...... netic complex oxide interface.
@en
Enhanced tunnelling electrores ...... netic complex oxide interface.
@nl
prefLabel
Enhanced tunnelling electrores ...... netic complex oxide interface.
@en
Enhanced tunnelling electrores ...... netic complex oxide interface.
@nl
P2093
P2860
P50
P356
P1433
P1476
Enhanced tunnelling electrores ...... gnetic complex oxide interface
@en
P2093
P2860
P2888
P304
P356
10.1038/NMAT3564
P407
P577
2013-02-17T00:00:00Z