Tunable field control over the binding energy of single dopants by a charged vacancy in GaAs.
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Dynamic probe of ZnTe(110) surface by scanning tunneling microscopyTuning the electron transport at single donors in zinc oxide with a scanning tunnelling microscope.Characterization and manipulation of individual defects in insulating hexagonal boron nitride using scanning tunnelling microscopy.Controlling the screening process of a nanoscaled space charge region by minority carriers.Tuning charge and correlation effects for a single molecule on a graphene deviceControlling electronic access to the spin excitations of a single molecule in a tunnel junction.A minimal double quantum dot.The molecular basis of memory.Spatial metrology of dopants in silicon with exact lattice site precision.Spatially resolving valley quantum interference of a donor in silicon.Single Electron Gating of Topological Insulators.Interface-induced heavy-hole/light-hole splitting of acceptors in siliconInterplay between quantum confinement and dielectric mismatch for ultrashallow dopantsTransport through a single donor in p-type siliconAn orbitally derived single-atom magnetic memory
P2860
Q29012023-8B2B8813-13BB-4E91-819E-1A3741088F4CQ35081959-A23EA805-E213-4D0E-A584-BE7E1E5A6840Q35753687-804BA9FA-35BB-4E6D-B56A-452899FAB10EQ35884612-1217D792-812B-4372-8AD1-9508545155C8Q36203927-7A98A72D-5948-4EE1-872B-431B02ABC5F3Q38915019-2EE39B09-6733-4915-8221-CA596BC782F8Q41540823-21D103ED-9B51-4921-AFA4-AC0A5B279E5AQ42504970-519037DD-4C47-4F65-8E62-764877546AA5Q51301214-7790398A-ED02-4816-84F8-EC532564E803Q51590457-9E2ED6A7-492E-477D-A2AE-54752A8A5D1DQ51792359-DD88BB76-BD52-4036-A65D-BCB45DB40AB4Q57367911-829D0D44-8212-4527-A269-366A2E04EFA4Q57387100-3A961B71-2084-463C-A2FD-02DCABD4F6CBQ57387104-97F40BB3-1A28-4FC1-BD15-07EF43B15C2FQ58698767-F26F7054-2275-4969-98FC-30E1AB20C8A5
P2860
Tunable field control over the binding energy of single dopants by a charged vacancy in GaAs.
description
2010 nî lūn-bûn
@nan
2010 թուականի Դեկտեմբերին հրատարակուած գիտական յօդուած
@hyw
2010 թվականի դեկտեմբերին հրատարակված գիտական հոդված
@hy
2010年の論文
@ja
2010年論文
@yue
2010年論文
@zh-hant
2010年論文
@zh-hk
2010年論文
@zh-mo
2010年論文
@zh-tw
2010年论文
@wuu
name
Tunable field control over the ...... by a charged vacancy in GaAs.
@ast
Tunable field control over the ...... by a charged vacancy in GaAs.
@en
type
label
Tunable field control over the ...... by a charged vacancy in GaAs.
@ast
Tunable field control over the ...... by a charged vacancy in GaAs.
@en
prefLabel
Tunable field control over the ...... by a charged vacancy in GaAs.
@ast
Tunable field control over the ...... by a charged vacancy in GaAs.
@en
P2860
P356
P1433
P1476
Tunable field control over the ...... by a charged vacancy in GaAs.
@en
P2093
P2860
P304
P356
10.1126/SCIENCE.1197434
P407
P577
2010-12-09T00:00:00Z