Spatial metrology of dopants in silicon with exact lattice site precision.
about
A quantum spin-probe molecular microscope.Ab initio calculation of energy levels for phosphorus donors in silicon.Implementation of Multivariable Logic Functions in Parallel by Electrically Addressing a Molecule of Three Dopants in Silicon.A two-dimensional ON/OFF switching device based on anisotropic interactions of atomic quantum dots on Si(100):H.Towards visualisation of central-cell-effects in scanning tunnelling microscope images of subsurface dopant qubits in silicon.
P2860
Spatial metrology of dopants in silicon with exact lattice site precision.
description
2016 nî lūn-bûn
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2016年の論文
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2016年学术文章
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2016年学术文章
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2016年学术文章
@zh-cn
2016年学术文章
@zh-hans
2016年学术文章
@zh-my
2016年学术文章
@zh-sg
2016年學術文章
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2016年學術文章
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name
Spatial metrology of dopants in silicon with exact lattice site precision.
@en
Spatial metrology of dopants in silicon with exact lattice site precision.
@nl
type
label
Spatial metrology of dopants in silicon with exact lattice site precision.
@en
Spatial metrology of dopants in silicon with exact lattice site precision.
@nl
prefLabel
Spatial metrology of dopants in silicon with exact lattice site precision.
@en
Spatial metrology of dopants in silicon with exact lattice site precision.
@nl
P2093
P2860
P50
P356
P1476
Spatial metrology of dopants in silicon with exact lattice site precision
@en
P2093
P2860
P2888
P304
P356
10.1038/NNANO.2016.83
P407
P577
2016-06-06T00:00:00Z
P698
P818
1601.02326