Memristive switching mechanism for metal/oxide/metal nanodevices.
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AHaH computing-from metastable switches to attractors to machine learningOverview of emerging nonvolatile memory technologiesHighly Stretchable Non-volatile Nylon Thread MemorySpin memristive systems: Spin memory effects in semiconductor spintronicsStatus and Prospects of ZnO-Based Resistive Switching Memory Devices.Reversible voltage dependent transition of abnormal and normal bipolar resistive switchingA fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structuresEngineering nonlinearity into memristors for passive crossbar applicationsA SHORT REVIEW ON DEEP-SUB-VOLTAGE NANOELECTRONICS AND RELATED TECHNOLOGIESHierarchical Chunking of Sequential Memory on Neuromorphic Architecture with Reduced Synaptic Plasticity.Non-volatile memory based on the ferroelectric photovoltaic effectResistive switching mechanism in the one diode-one resistor memory based on p+-Si/n-ZnO heterostructure revealed by in-situ TEM.Enhanced stability of filament-type resistive switching by interface engineeringA deformation mechanism of hard metal surrounded by soft metal during roll forming.Pavlovian conditioning demonstrated with neuromorphic memristive devicesInterfacial chemical bonding-mediated ionic resistive switching.Ultra-large non-volatile modulation of magnetic moments in PbZr0.2Ti0.8O3/MgO/La0.7Sr0.3MnO3 heterostructure at room temperature via interfacial polarization mediation.Tunable field control over the binding energy of single dopants by a charged vacancy in GaAs.Stochastic switching of TiO2-based memristive devices with identical initial memory states.TaOx-based resistive switching memories: prospective and challenges.Novel electroforming-free nanoscaffold memristor with very high uniformity, tunability, and density.Comparison of resistive switching characteristics using copper and aluminum electrodes on GeOx/W cross-point memories.Two centuries of memristors.Evolution of conductive filament and its impact on reliability issues in oxide-electrolyte based resistive random access memory.In situ observation of filamentary conducting channels in an asymmetric Ta₂O5-x/TaO2-x bilayer structure.In situ forming, characterization, and transduction of nanowire memristors.Tunnel conductivity switching in a single nanoparticle-based nano floating gate memory.Anatomy of vertical heteroepitaxial interfaces reveals the memristive mechanism in Nb₂O₅-NaNbO₃ thin films.Ultra-flexible nonvolatile memory based on donor-acceptor diketopyrrolopyrrole polymer blendsBipolar resistance switching characteristics with opposite polarity of Au/SrTiO3/Ti memory cells.Tailoring resistive switching in Pt/SrTiO3 junctions by stoichiometry control.Complex Learning in Bio-plausible Memristive NetworksDirect evidence on Ta-Metal Phases Igniting Resistive Switching in TaO(x) Thin Film.The Missing Memristor has Not been Found.Controlling the metal-to-insulator relaxation of the metastable hidden quantum state in 1T-TaS2.Atomic View of Filament Growth in Electrochemical Memristive ElementsDeterministic conversion between memory and threshold resistive switching via tuning the strong electron correlation.Probing the electrical switching of a memristive optical antenna by STEM EELS.Temperature-Dependent Non-linear Resistive Switching Characteristics and Mechanism Using a New W/WO3/WOx/W Structure.In situ TEM observation on the interface-type resistive switching by electrochemical redox reactions at a TiN/PCMO interface.
P2860
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P2860
Memristive switching mechanism for metal/oxide/metal nanodevices.
description
2008 nî lūn-bûn
@nan
2008年の論文
@ja
2008年学术文章
@wuu
2008年学术文章
@zh
2008年学术文章
@zh-cn
2008年学术文章
@zh-hans
2008年学术文章
@zh-my
2008年学术文章
@zh-sg
2008年學術文章
@yue
2008年學術文章
@zh-hant
name
Memristive switching mechanism for metal/oxide/metal nanodevices.
@en
Memristive switching mechanism for metal/oxide/metal nanodevices.
@nl
type
label
Memristive switching mechanism for metal/oxide/metal nanodevices.
@en
Memristive switching mechanism for metal/oxide/metal nanodevices.
@nl
prefLabel
Memristive switching mechanism for metal/oxide/metal nanodevices.
@en
Memristive switching mechanism for metal/oxide/metal nanodevices.
@nl
P2093
P356
P1476
Memristive switching mechanism for metal/oxide/metal nanodevices.
@en
P2093
Douglas A A Ohlberg
Duncan R Stewart
J Joshua Yang
Matthew D Pickett
P2888
P304
P356
10.1038/NNANO.2008.160
P407
P577
2008-06-15T00:00:00Z