Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET
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A SHORT REVIEW ON DEEP-SUB-VOLTAGE NANOELECTRONICS AND RELATED TECHNOLOGIESTunable field control over the binding energy of single dopants by a charged vacancy in GaAs.Single dopants in semiconductors.A single-atom transistor.Ohm's law survives to the atomic scale.Quantum engineering at the silicon surface using dangling bondsAtomistic modeling of metallic nanowires in silicon.Gate length variation effect on performance of gate-first self-aligned In₀.₅₃Ga₀.₄₇As MOSFET.Tuning the electron transport at single donors in zinc oxide with a scanning tunnelling microscope.Integrated logic circuits using single-atom transistors.Tunneling in Systems of Coupled Dopant-Atoms in Silicon Nano-devicesOn the Current Drive Capability of Low Dimensional Semiconductors: 1D versus 2D.Band transport across a chain of dopant sites in silicon over micron distances and high temperatures.Silicon quantum processor with robust long-distance qubit couplings.Transport spectroscopy of coupled donors in silicon nano-transistors.Dynamics of a single-atom electron pump.Passivation and characterization of charge defects in ambipolar silicon quantum dotsElectric-field-assisted formation of an interfacial double-donor molecule in silicon nano-transistors.Communication: Master equations for electron transport: The limits of the Markovian limit.Donor qubits in silicon: Electrical control of nuclear spins.Single-electron tunneling through an individual arsenic dopant in silicon.Hole Spin Resonance and Spin-Orbit Coupling in a Silicon Metal-Oxide-Semiconductor Field-Effect Transistor.Lifetime-enhanced transport in silicon due to spin and valley blockade.Limits to metallic conduction in atomic-scale quasi-one-dimensional silicon wires.Spatially resolving valley quantum interference of a donor in silicon.Optical addressing of an individual erbium ion in silicon.Valley-based noise-resistant quantum computation using Si quantum dots.A tight-binding study of single-atom transistors.Mapping donor electron wave function deformations at a sub-Bohr orbit resolution.Analog/RF Study of Self-aligned In0.53Ga0.47As MOSFET with Scaled Gate LengthStrain and electric field control of hyperfine interactions for donor spin qubits in siliconAn environment-dependent semi-empirical tight binding model suitable for electron transport in bulk metals, metal alloys, metallic interfaces, and metallic nanostructures. I. Model and validationFeasibility, accuracy, and performance of contact block reduction method for multi-band simulations of ballistic quantum transportElectric field reduced charging energies and two-electron bound excited states of single donors in siliconElectronic structure of realistically extended atomistically resolved disordered Si:Pδ-doped layersEngineered valley-orbit splittings in quantum-confined nanostructures in siliconCoherent electron transport by adiabatic passage in an imperfect donor chainSimulation of nanowire tunneling transistors: From the Wentzel–Kramers–Brillouin approximation to full-band phonon-assisted tunnelingStrain-induced, off-diagonal, same-atom parameters in empirical tight-binding theory suitable for [110] uniaxial strain applied to a silicon parametrizationAtomistic simulations of adiabatic coherent electron transport in triple donor systems
P2860
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P2860
Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET
description
2008 nî lūn-bûn
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2008年の論文
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2008年学术文章
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2008年学术文章
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2008年学术文章
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2008年学术文章
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2008年学术文章
@zh-my
2008年学术文章
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2008年學術文章
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name
Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET
@en
Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET
@nl
type
label
Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET
@en
Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET
@nl
prefLabel
Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET
@en
Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET
@nl
P2093
P50
P356
P1433
P1476
Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET
@en
P2093
C. J. Wellard
G. P. Lansbergen
L. C. L. Hollenberg
N. Collaert
S. Biesemans
P2888
P304
P356
10.1038/NPHYS994
P577
2008-06-15T00:00:00Z