Quantum simulation of the Hubbard model with dopant atoms in silicon.
about
Ab initio calculation of energy levels for phosphorus donors in silicon.A minimal double quantum dot.Implementation of Multivariable Logic Functions in Parallel by Electrically Addressing a Molecule of Three Dopants in Silicon.Quantum simulation of a Fermi-Hubbard model using a semiconductor quantum dot array.Spatial metrology of dopants in silicon with exact lattice site precision.Charge-Insensitive Single-Atom Spin-Orbit Qubit in Silicon.
P2860
Quantum simulation of the Hubbard model with dopant atoms in silicon.
description
2016 nî lūn-bûn
@nan
2016年の論文
@ja
2016年論文
@yue
2016年論文
@zh-hant
2016年論文
@zh-hk
2016年論文
@zh-mo
2016年論文
@zh-tw
2016年论文
@wuu
2016年论文
@zh
2016年论文
@zh-cn
name
Quantum simulation of the Hubbard model with dopant atoms in silicon.
@en
type
label
Quantum simulation of the Hubbard model with dopant atoms in silicon.
@en
prefLabel
Quantum simulation of the Hubbard model with dopant atoms in silicon.
@en
P2860
P50
P356
P1476
Quantum simulation of the Hubbard model with dopant atoms in silicon.
@en
P2093
P2860
P2888
P356
10.1038/NCOMMS11342
P407
P577
2016-04-20T00:00:00Z
P698
P818
1507.06125